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Positive temperature coefficient of resistance of single ZnO nanorods

机译:单个ZnO纳米棒的电阻正温度系数

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ZnO nanorods were synthesized by a simple aqueous solution method. Crystal structures and morphology studies show that the ZnO nanorods are single crystalline with the growth direction aligned with the c axis of ZnO. An Au-ZnO nanorod-Au (metal-semiconductor-metal, MSM) device using the synthesized nanorod was fabricated. An electronic model with two back-to-back Schottky diodes in series with a nanorod was used to describe the electrical transport of the MSM device. A positive temperature coefficient of resistance is observed on a single ZnO nanorod from 383 to 473 K. A simple model has been proposed to explain such an abnormal behavior including the effect of the interface states and the adsorption-desorption of the water/oxygen molecules on the surface of the nanorod.
机译:ZnO纳米棒通过简单的水溶液法合成。晶体结构和形态学研究表明,ZnO纳米棒是单晶的,其生长方向与ZnO的c轴对齐。使用合成的纳米棒制造了Au-ZnO纳米棒-Au(金属-半导体-金属,MSM)器件。具有两个背对背肖特基二极管与纳米棒串联的电子模型用于描述MSM器件的电传输。在383至473 K的单个ZnO纳米棒上观察到了正的电阻温度系数。已提出了一个简单的模型来解释这种异常行为,包括界面态的影响以及水/氧分子在表面上的吸附-解吸纳米棒的表面。

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