Formation and in situ dynamics of metallic nanoblisters in Ga~+ implanted GaN nanowires

A Datta; S Dhara; S Muto

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Formation and in situ dynamics of metallic nanoblisters in Ga~+ implanted GaN nanowires

机译：Ga〜+注入的GaN纳米线中金属纳米泡的形成和原位动力学

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The formation of voids and bubbles in the energetic ion implantation process is an important issue in material science research, involving swelling induced embrittlement of materials in nuclear reactors, catalytic activities in the nanopores of the bubble, etc. We report here the formation and in situ dynamics of metallic nanoblisters in GaN nanowires under self-ion implantation using a Ga~+ focused ion beam. High-resolution transmission electron microscopes equipped with electron energy loss spectroscopy and energy filtering are used to identify the constituents of the blister. In situ monitoring, with focused ion beam imaging, revealed the translation and rotation dynamics of the blisters.

机译：高能离子注入过程中空隙和气泡的形成是材料科学研究中的一个重要问题，涉及溶胀引起的核反应堆材料脆化，气泡纳米孔中的催化活性等。我们在此报告其形成和原位Ga〜+聚焦离子束自离子注入作用下GaN纳米线中金属纳米泡的动力学配备有电子能量损失谱仪和能量过滤器的高分辨率透射电子显微镜可用来识别水泡的成分。原位监测，聚焦离子束成像，揭示了水泡的平移和旋转动力学。

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《Nanotechnology》 |2005年第12期|共6页
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A Datta; S Dhara; S Muto;
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1. Formation and in situ dynamics of metallic nanoblisters in Ga~+ implanted GaN nanowires [J] . A Datta, S Dhara, S Muto Nanotechnology . 2005,第12期

机译：Ga〜+注入的GaN纳米线中金属纳米泡的形成和原位动力学
2. Growth of a-axial GaN core nanowires, semi-polar (1101) GaN/InGaN multiple quantum well co-axial nanowires on Si substrate, and their carrier dynamics [J] . Johar Muhammad Ali, Waseem Aadil, Song Hyun-Gyu, Optical Materials . 2020,第Jula期

机译：A轴轴芯纳米线的生长，半极性（1101）GaN / IngaN多量子阱在Si衬底上的多量子阱共轴纳米线及其载体动力学
3. Hexagonal-to-cubic phase transformation in GaN nanowires by Ga~(+) implantation [J] . S. Dhara, A. Datta, C. T. Wu, Applied Physics Letters . 2004,第26期

机译：Ga〜（+）注入在GaN纳米线中的六方相立方相变
4. Comparison of Er~(3+) Photoluminescence and Photoluminescence Excitation Spectroscopy in In-situ-doped GaN:Er and Er-implanted GaN [C] . Andrea M. Mitofsky, George C. Papen, Stephen G. Bishop, MRS Meeting . 2001

机译：ER〜（3+）光致发光和光致发光激发光谱对原位掺杂GaN的比较：ER和ER植入GaN
5. Electron Dynamics of TiN Thin Films and InGaN/GaN Dot-in-Nanowires [D] . George, Heather J. 2018

机译：TiN薄膜和InGaN / GaN点对纳米线的电子动力学
6. Carrier Dynamics and Electro-Optical Characterization of High-Performance GaN/InGaN Core-Shell Nanowire Light-Emitting Diodes [O] . Mohsen Nami, Isaac E. Stricklin, Kenneth M. DaVico, -1

机译：高性能GaN / InGaN核壳纳米线发光二极管的载流子动力学和光电特性
7. Mechanism of nanoblister formation in Ga+ self-ion implanted GaN nanowires [O] . Dhara S. 2010

机译：Ga +自离子注入的GaN纳米线中纳米气泡形成的机理

Formation and in situ dynamics of metallic nanoblisters in Ga~+ implanted GaN nanowires

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