Optical absorption and birefringence in GaAs/AlAs MQW structures due to intersubband electron transitions

L E Vorobjev; S N Danilov

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Optical absorption and birefringence in GaAs/AlAs MQW structures due to intersubband electron transitions

机译：由于子带间电子跃迁，GaAs / AlAs MQW结构中的光吸收和双折射

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Optical absorption and birefringence due to intersubband electron transitions were investigated in GaAs/AlAs MQW structures. These structures are intended for creation of a mid-infrared laser of a new type. Experimental results on electron redistribution between size-quantization levels under electron heating were obtained up to an electric field of 3500 V cm~(-1).

机译：在GaAs / AlAs MQW结构中研究了由于子带间电子跃迁引起的光吸收和双折射。这些结构旨在用于创建新型的中红外激光器。在高达3500 V cm〜（-1）的电场作用下，获得了电子在电子尺寸量子化水平之间重新分布的实验结果。

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《Nanotechnology》 |2000年第4期|共3页
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L E Vorobjev; S N Danilov;
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1. Optical absorption and birefringence in GaAs/AlAs MQW structures due to intersubband electron transitions [J] . L E Vorobjev, S N Danilov Nanotechnology . 2000,第4期

机译：由于子带间电子跃迁，GaAs / AlAs MQW结构中的光吸收和双折射
2. Absorption Dynamics in All-Optical Switch Based on Intersubband Transition in InGaAs–AlAs–AlAsSb Coupled Quantum Wells [J] . Simoyama T., Sekiguchi S., Yoshida H., IEEE Photonics Technology Letters . 2007,第8期

机译：InGaAs-AlAs-AlAsSb耦合量子阱中基于子带间跃迁的全光开关吸收动力学
3. Intersubband transitions in InGaAs/AlAs coupled double quantum well structures for multi-wavelength all-optical switching [J] . Yoshida H., Mozume T. Electronics Letters . 1998,第9期

机译：InGaAs / AlAs耦合双量子阱结构中的子带间跃迁，用于多波长全光交换
4. A novel InGaAs/AlAs/AlAsSb quantum well structures for ultrafast and low-power all-optical switches using intersubband transitions [C] . Mozume, T., Kasai, . 2003

机译：一种新颖的InGaAs / AlAs / AlAsSb量子阱结构，用于使用子带间跃迁的超快和低功耗全光开关
5. Near infrared wavelength absorption due to intersubband transitions in gallium nitride/aluminum nitride superlattices. [D] . Fred, Emil. 2007

机译：由于氮化镓/氮化铝超晶格中的子带间跃迁而引起的近红外波长吸收。
6. Intersubband terahertz transitions in Landau level system of cascade GaAs/AlGaAs quantum well structures in strong tilted magnetic field [O] . Maksim P Telenkov, Yury A Mityagin, Petr F Kartsev 2012

机译：强倾斜磁场中级联GaAs / AlGaAs量子阱结构的Landau能级系统中的子带太赫兹跃迁
7. Short-wavelength intersubband absorption in strain compensated InGaAs/AlAs quantum well structures grown on InP [O] . N. Georgiev, T. Dekorsy, F. Eichhorn, 2003

机译：在INP上生长的应变补偿InGaAs / Alas量子井结构的短波长运动轴吸收

Optical absorption and birefringence in GaAs/AlAs MQW structures due to intersubband electron transitions

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