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首页> 外文期刊>Nanotechnology >Probing the p-Ge1-xSix/Ge/p-Ge1-xSix quantum well by means of the quantum Hall effect
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Probing the p-Ge1-xSix/Ge/p-Ge1-xSix quantum well by means of the quantum Hall effect

机译：通过量子霍尔效应探测p-Ge1-xSix / Ge / p-Ge1-xSix量子阱

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We have measured the temperature (0.1 less than or equal to T less than or equal to 15 K) and magnetic field (0 less than or equal to B less than or equal to 32 T) dependences of longitudinal and Hall resistivities for the p-Ge0.93Si0.07/Ge multilayers with different Ge layer widths 10 less than or equal to d(w) less than or equal to 38 nm and hole densities p(s) = (1-5) x 10(15) m(-2). An extremely high sensitivity of the experimental data (the structure of magnetoresistance traces, relative values of the inter-landau-level (LL) gaps deduced from the activation magnetotransport etc) to the quantum well (QW) characteristics has been revealed in the cases when the Fermi level reached the second confinement subband. The background density of states (5-10) x 10(14) m(-2) meV(-1) deduced from the activation behaviour of the magnetoresistance was too high to be attributed to the LL tails, but may be accounted for within a smooth random potential model. The hole gas in the Ge QW was found to separate into two sublayers for d(w) > similar to 35 nm and p(s) approximate to 5 x 10(15) m(-2). Concomitantly the positive magnetoresistance emerged in the weakest fields, from which different mobilities in the sublayers were deduced. A model is suggested to explain the existence of the plateaux close to the fundamental values in a system of two parallel layers with different mobilities. [References: 20]
机译：我们已经测量了温度（0.1小于等于T小于等于15 K）和磁场（0小于等于B小于等于32 T）对于p-的纵向和霍尔电阻率的依赖性。 Ge0.93Si0.07 / Ge多层膜，其Ge层的不同宽度10小于或等于d（w）小于或等于38 nm，且空穴密度p（s）=（1-5）x 10（15）m（ -2）。在以下情况下，实验数据（量子磁阱）对量子阱（QW）特性具有极高的敏感性：实验数据（磁阻迹线的结构，由激活磁传输推导出的陆间能级（LL）间隙的相对值等）。费米能级达到了第二个约束子带。由磁阻的激活行为推导出的状态（5-10）x 10（14）m（-2）meV（-1）的背景密度太高，无法归因于LL尾巴，但可能是由于平滑的随机势模型。发现Ge QW中的空穴气体因d（w）>类似于35 nm，而p（s）近似于5 x 10（15）m（-2）分成两个子层。随之而来的是，在最弱的磁场中出现了正磁阻，由此推断出子层的不同迁移率。建议使用一个模型来解释在具有不同迁移率的两个平行层系统中接近基本值的平台的存在。 [参考：20]

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