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Growth of carbon nanotubes on cobalt catalyst film using electron cyclotron resonance chemical vapour deposition without thermal heating

机译:使用电子回旋共振化学气相沉积在不加热的情况下在钴催化剂膜上生长碳纳米管

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This paper demonstrates that carbon nanotubes (CNTs) can be synthesized on a cobalt coated silicon substrate using electron cyclotron chemical vapour deposition and without intentionally heating the substrate. With the mixed gases of C_3H_8/N_2, CNTs with a multi-walled structure and a diameter up to 70 nm have been observed. Results show that the diameter of the CNTs increases with the thickness of the cobalt catalyst film and the amount of nitrogen incorporated in the CNT films considerably influences the structures of the CNTs. Vertically aligned CNTs can be fabricated with a microwave power as low as 300 W and the flow rate ratio of C_3H_8/N_2 = 20/20 sccm. The CNTs exhibit a turn-on field of 0.2 V mu m~(-1) determined at the emission current density of 10 mu A cm~(-2).
机译:本文证明,可以使用电子回旋加速器化学气相沉积技术在钴涂覆的硅基板上合成碳纳米管(CNT),而无需故意加热基板。利用C_3H_8 / N_2的混合气体,观察到具有多壁结构且直径最大为70nm的CNT。结果表明,CNT的直径随钴催化剂膜的厚度而增加,并且结合在CNT膜中的氮的量极大地影响了CNT的结构。可以使用低至300 W的微波功率和C_3H_8 / N_2 = 20/20 sccm的流率来制造垂直排列的CNT。在发射电流密度为10μAcm〜(-2)时,CNT的导通场为0.2 Vμm〜(-1)。

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