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Memory effect and retention property of Ge nanocrystal embedded Hf-aluminate high-kappa gate dielectric

机译：Ge纳米晶体嵌入的Hf-铝酸盐高κ栅极电介质的记忆效应和保持性能

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摘要

The memory effect and retention characteristics of a Ge nanocrystal (NC) floating gate memory structure consisting of Hf-aluminate (HfAlO) tunnelling and control oxides have been investigated by means of high-frequency capacitance-voltage (C-V) and capacitance-time (C-t) measurements. The trilayer structure (HfAlO/Ge-NC/HfAlO) on Si was fabricated by pulsed-laser deposition at a relatively low temperature. A high-resolution transmission electron microscopy study revealed that the Ge nanocrystals are about 5 nm in diameter and are well distributed within the amorphous HfAlO matrix. The memory effect was revealed by the counter-clockwise hysteresis loop in the C-V curves and a high storage charge density of about 1 X 10~(13) cm~(-2) and a large flat-band voltage shift of 3.6 V have been achieved. An 8 percent decay in capacitance after 104 s in the C-t measurement suggests a promising retention property of Ge NC charge storage. The effects of size/density of the Ge NC, the tunnelling and control oxide layer thicknesses and their growth oxygen partial pressure to the charge storage and charge retention characteristics have been studied.
机译：利用高频电容-电压（CV）和电容时间（Ct）研究了由铝酸盐（HfAlO）隧穿和控制氧化物组成的Ge纳米晶体（NC）浮栅存储结构的存储效应和保留特性。 ） 测量。通过在相对较低的温度下通过脉冲激光沉积来制造Si上的三层结构（HfAlO / Ge-NC / HfAlO）。高分辨率透射电子显微镜研究表明，Ge纳米晶体的直径约为5 nm，并且很好地分布在非晶HfAlO基体内。通过CV曲线中的逆时针磁滞回线揭示了记忆效应，并且已经获得了大约1 X 10〜（13）cm〜（-2）的高存储电荷密度和3.6 V的大平带电压偏移。实现。 C-t测量中104 s后电容下降8％，这表明Ge NC电荷存储的保留特性很有希望。研究了Ge ​​NC的尺寸/密度，隧穿和控制氧化物层的厚度及其生长氧分压对电荷存储和电荷保持特性的影响。

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