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Magnetotransport studies of a single nickel nanowire

机译:单个镍纳米线的磁传输研究

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The diameter dependent magnetoresistance of a single Ni nanowire (i.e. 200 and 30 nm diameter) bridging microfabricated Ni electrodes was investigated at temperatures ranging from 10 to 300 K. Overall, the magnetotransport behaviour of single Ni nanowires was similar to the results for thin films, except that the magnitudes of transverse magnetoresistance and longitudinal magnetoresistance differed from the values for thin films when the diameter of the nanowire was small. The difference might be attributed to a change in the stress anisotropy of the nanowire from a tensile stress induced by a thermal expansion mismatch between the nanowire and the Si substrate or different magnetocrystalline anisotropy. Based on the angle dependent switching field, the magnetization reversal mechanism of 30 and 200 nm nanowires at 10 K was determined to be the curling mode, and the size of the curling nucleation is smaller than the diameter of the nanowire.
机译:在10至300 K的温度范围内研究了单根Ni纳米线(即直径200和30 nm)桥接微加工Ni电极的直径依赖性磁阻。总的来说,单根Ni纳米线的磁输运行为与薄膜的结果相似,除了当纳米线的直径小时,横向磁阻和纵向磁阻的大小不同于薄膜的值。该差异可能归因于由纳米线和Si衬底之间的热膨胀失配或不同的磁晶各向异性引起的拉伸应力引起的纳米线的应力各向异性的变化。基于与角度有关的切换场,将30和200 nm纳米线在10 K下的磁化反转机制确定为卷曲模式,并且卷曲成核的尺寸小于纳米线的直径。

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