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Technology computer-aided design modelling of single-atom doping for fabrication of buried nanostructures

机译：用于掩埋纳米结构制造的单原子掺杂技术的计算机辅助设计建模

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Future quantum devices may exploit arrays of dopants positioned with nanoscale precision in an intrinsic semiconductor matrix. One proposal for the fabrication of such an array is by the implantation of single low-energy dopant ions into prefabricated cells within the device, the arrival of each dopant being detected electrically. With the aid of technology computer-aided design (TCAD) modelling, we outline an electrical registration process which makes use of appropriately biased electrodes incorporated within the device to detect the space charge induced within the near-intrinsic substrate by a single-ion implant. A series of simulations aimed at optimizing the charge detection efficiency in such detectors are described, and found to be in good agreement with experimental measurements conducted to characterize fabricated test structures via high-energy He-ion implantation. We demonstrate this fabrication strategy to offer the potential of creating scalable arrangements of dopants for extended nanoscale device applications. Our interest in this scheme is the development of the Kane solid-state quantum computer (Kane B E 1998 Nature 393 133), which exploits as qubits ~(31)P atoms embedded with nanoscale precision in an array, within a pure ~(28)Si MOS architecture.
机译：未来的量子器件可能会利用在本征半导体矩阵中以纳米级精度定位的掺杂剂阵列。制造这样的阵列的一个建议是通过将单个低能量掺杂剂离子注入到装置内的预制单元中，以电学方式检测每种掺杂剂的到达。借助技术计算机辅助设计（TCAD）建模，我们概述了一种电配准过程，该过程利用设备中内置的适当偏置的电极来检测单离子注入在近本征衬底内感应出的空间电荷。描述了旨在优化此类检测器中电荷检测效率的一系列模拟，并发现与通过高能He离子注入表征制造的测试结构的实验测量结果非常吻合。我们演示了这种制造策略，可为扩展的纳米级器件应用提供创建可扩展的掺杂剂排列的潜力。我们对这一方案的兴趣是开发了Kane固态量子计算机（Kane BE 1998 Nature 393 133），该计算机利用qubits〜（31）P原子以纯纳米级精度嵌入到一个数组中，而纯~~（28） Si MOS体系结构。

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