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Structural and electrical characterization of ohmic contacts to graphitized silicon carbide

机译：石墨化碳化硅欧姆接触的结构和电气特性

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摘要

Titanium was deposited onto silicon carbide (6H-SiC) using the 248 nm line of an excimer laser in a vacuum of 10(-6) Torr, and ohmic contacts were formed by annealing the structure at similar to 1000 degrees C. Further anneals between 1350 and 1430 degrees C did not degrade the formed contacts, and Raman analysis confirmed that sublimation of silicon from the near surface layers of the silicon carbide between the contact pads resulted in graphene formation after 5 min, 1428 degrees C anneals. The graphene formation was accompanied by a significant enhancement of ohmic behavior, and, it was found to be sensitive to the temperature ramp-up rate and annealing time. High-resolution transmission electron microscopy showed that the interface between the metal and silicon carbide remained sharp and free of macroscopic defects even after 30 min, 1430 degrees C anneals. The interface was determined to be carbon rich by elemental analysis, which indicates metal carbide formation. The potential of this approach for achieving ohmic contacts and graphene formation on silicon carbide substrates is discussed. A mechanism for the sequential formation of ohmic contacts then graphene is proposed.
机译：使用准分子激光器的248 nm线在10（-6）Torr的真空中将钛沉积到碳化硅（6H-SiC）上，并通过在类似于1000摄氏度的条件下退火该结构来形成欧姆接触。 1350和1430摄氏度不会降低所形成的接触，拉曼分析证实，在5分钟，1428摄氏度的退火温度下，接触垫之间碳化硅近表面层的硅升华导致石墨烯形成。石墨烯的形成伴随着欧姆行为的显着增强，并且发现石墨烯对温度上升速率和退火时间敏感。高分辨率透射电子显微镜显示，即使在30分钟，1430℃退火后，金属与碳化硅之间的界面仍保持清晰且无宏观缺陷。通过元素分析确定该界面富含碳，这表明形成了金属碳化物。讨论了这种方法在碳化硅衬底上实现欧姆接触和石墨烯形成的潜力。提出了一种依次形成欧姆接触和石墨烯的机制。

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