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首页> 外文期刊>Nanotechnology >Four-probe electrical-transport measurements on single indium tin oxide nanowires between 1.5 and 300 K
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Four-probe electrical-transport measurements on single indium tin oxide nanowires between 1.5 and 300 K

机译：在1.5至300 K之间的单铟锡氧化物纳米线上的四探针电传输测量

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摘要

Single-crystalline indium tin oxide (ITO) nanowires (NWs) were grown by the standard thermal evaporation method. The as-grown NWs were typically 100-300 nm in diameter and a few gm long. Four-probe submicron Ti/Au electrodes on individual NWs were fabricated by the electron-beam lithography technique. The resistivities of several single NWs have been measured from 300 down to 1.5 K. The results indicate that the as-grown ITO NWs are metallic, but disordered. The overall temperature behavior of resistivity can be described by the Bloch—Grüneisen law plus a low-temperature correction due to the scattering of electrons off dynamic point defects. This observation suggests the existence of numerous dynamic point defects in as-grown ITO NWs.
机译：通过标准热蒸发法生长单晶铟锡氧化物（ITO）纳米线（NWs）。成长中的NW通常直径为100-300 nm，长度为几gm。通过电子束光刻技术在各个NW上制备了四探针亚微米Ti / Au电极。已测量了从300到1.5 K的几个单个NW的电阻率。结果表明，生长中的ITO NW是金属的，但是无序。电阻率的总体温度行为可以通过布洛赫-格吕尼森定律以及由于电子从动态点缺陷处散射而进行的低温校正来描述。该观察结果表明，成膜的ITO NW中存在许多动态点缺陷。

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