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The influence of surface chemical dynamics on electrical and optical properties of ZnO nanowire field effect transistors

机译：表面化学动力学对ZnO纳米线场效应晶体管电和光学性能的影响

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摘要

We demonstrate the effect of surface chemical dynamics on carrier transport and recombination processes of electron-hole pairs in ZnO nanowire field effect transistors. We have found that the electrical conductance decreases and the threshold voltages shift in a positive gate voltage direction, as electrical characteristics are measured repeatedly. We associate this with the enhancement of oxygen adsorption by capturing electrons from the induced current during the probing. This results in an overall depletion of electrons and thus causes the positive shift in threshold voltages associated with the origin and width of characteristic hysteresis loops. In addition, the surface environment dependence of the photo-response related to a recombination process in ZnO nanowires is discussed in terms of the surface chemical reaction and band bending.
机译：我们证明了表面化学动力学对ZnO纳米线场效应晶体管中电子-空穴对的载流子迁移和复合过程的影响。我们已经发现，随着重复测量电特性，电导率降低并且阈值电压沿正栅极电压方向移动。我们通过在探测过程中从感应电流中捕获电子来增强氧气的吸收。这导致电子的整体耗尽，并因此导致阈值电压的正向偏移，该阈值电压与特征磁滞回线的起点和宽度相关。此外，还从表面化学反应和能带弯曲的角度讨论了光响应与ZnO纳米线复合过程相关的表面环境依赖性。

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