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In situ real-time monitoring of changes in the surface roughness during nonadiabatic optical near-field etching

机译:非绝热光学近场蚀刻过程中表面粗糙度变化的原位实时监测

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We performed in situ real-time monitoring of the change in surface roughness during self-organized optical near-field etching. During near-field etching of a silica substrate, we detected the scattered light intensity from a continuum wave (CW) laser (λ = 633 nm) in addition to the etching CW laser (λ = 532 nm) light source. We discovered that near-field etching not only decreases surface roughness, but also increases the number of scatterers, as was confirmed by analyzing the AFM image. These approaches provide optimization criteria for the etching parameter and hence for further decreases in surface roughness.
机译:我们对自组织光学近场蚀刻过程中表面粗糙度的变化进行了原位实时监测。在二氧化硅基板的近场蚀刻过程中,除了蚀刻CW激光器(λ= 532 nm)光源外,我们还检测到来自连续波(CW)激光器(λ= 633 nm)的散射光强度。我们发现,近场蚀刻不仅降低了表面粗糙度,而且还增加了散射体的数量,这一点已通过分析AFM图像得到证实。这些方法为蚀刻参数提供了最佳标准,因此可以进一步降低表面粗糙度。

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