Deep UV pattern definition in PMMA

Burke BG; Herlihy TJ; Spisak AB; Williams KA

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Deep UV pattern definition in PMMA

机译：PMMA中的深紫外线图案定义

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We have patterned polymethyl methacrylate (PMMA) resist by exposing it to the fifth harmonic (213 nm) of an Nd:YAG source through metalized apertures in contact with the resist. Interference patterns with both near- and far-field origins were observed. In order to test the contrast and uniformity of exposure, we deposited germanium onto developed areas to form arrays with feature sizes of similar to 200 nm. We present a straightforward model for interference effects generated in our process, and discuss opportunities for direct-write lithography through single apertures.

机译：我们通过将聚甲基丙烯酸甲酯（PMMA）抗蚀剂通过与抗蚀剂接触的金属化开口暴露在Nd：YAG源的五次谐波（213 nm）上，从而对其进行了图案化。观察到具有近场和远场起源的干扰模式。为了测试曝光的对比度和均匀性，我们将锗沉积到显影区域上，以形成特征尺寸类似于200 nm的阵列。我们提出了一个简单的模型来处理过程中产生的干涉效应，并讨论了通过单孔进行直接写入光刻的机会。

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《Nanotechnology》 |2008年第21期|共6页
作者
Burke BG; Herlihy TJ; Spisak AB; Williams KA;
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原文格式 PDF
正文语种 eng
中图分类一般工业技术;
关键词
ELECTRON-BEAM LITHOGRAPHY; DIFFRACTION LIMIT; SURFACE; RESOLUTION; ARRAY; AG;

机译：电子束光刻;衍射极限;表面;分辨率;阵列;AG;

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专利

1. Deep UV pattern definition in PMMA [J] . Burke BG, Herlihy TJ, Spisak AB, Nanotechnology . 2008,第21期

机译：PMMA中的深紫外线图案定义
2. Printed wax masks for 254 nm deep-UV pattering of PMMA-based microfluidics [J] . Yiqiang Fan, Yang Liu, Huawei Li, Journal of Micromechanics and Microengineering . 2012,第2期

机译：印刷蜡掩膜，用于基于PMMA的微流体的254 nm深紫外图案化
3. Micro-patterned nanoscale Au films on PMMA: fabrication and effect of PMMA dewetting on Au patterning [J] . F. Ruffino, V. Torrisi, G. Marietta, Journal of materials science . 2014,第2期

机译：PMMA上的微图案纳米级Au膜：PMMA的去湿及其对Au图案的影响
4. E-beam and deep-UV exposure of PMMA-based resists: identical or different chemical behavior? [C] . A.Uhl, Juergen Bendig, J.Leistner, Conference on advances in resist technology and processing . 1998

机译：e-beam和深紫色的PMMA抗蚀剂曝光：相同或不同的化学行为？
5. Sensitivity enhancement of poly(methyl methacrylate) by radiation-induced modification and degradation of PMMA by deep UV, x-ray,e-beam and proton beam irradiations. [D] . Choi, Jin-O. 1989

机译：通过深紫外线，X射线，电子束和质子束辐照辐射诱导的PMMA改性和降解来增强聚甲基丙烯酸甲酯的敏感性。
6. Performance Improvement of AlN Crystal Quality Grown on Patterned Si(111) Substrate for Deep UV-LED Applications [O] . Binh Tinh Tran, Noritoshi Maeda, Masafumi Jo, -1

机译：用于深度UV-LED应用的图案化Si（111）衬底上生长的AlN晶体质量的性能改善
7. Low-cost microfluidics on commercial grade poly(methyl methacrylate) (PMMA) using deep-UV patterning [O] . Haiducu Marius 2009

机译：使用深紫外图案在商用级聚甲基丙烯酸甲酯（PMMA）上的低成本微流体
8. Laboratory Instrumentation Design Research for Scalable Next Generation Epitaxy: Non-Equilibrium Wide Application Epitaxial Patterning by Intelligent Control (NEW-EPIC). Volume 1. 3D Composition/Doping Control via Micromiror Patterned Deep UV Photodesorption: Revolutionary in situ Characterization/Control [R] . Doolittle, W. A., Frazier, A. B., Burnham, S. D., 2009

机译：可扩展下一代外延的实验室仪器设计研究：通过智能控制的非平衡宽应用外延图案化（NEW-EpIC）。第1卷。通过micromiror图案化深紫外光解吸附进行3D成分/掺杂控制：革命性的原位表征/控制

Deep UV pattern definition in PMMA

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