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Flexible TFTs based on solution-processed ZnO nanoparticles

机译：基于溶液处理的ZnO纳米粒子的柔性TFT

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摘要

Flexible attention in recent years. In particular, solution processes have been spotlighted in the field of flexible electronics, since they provide the opportunity to fabricate flexible electronics using low-temperature processes at low-cost with high throughput. However, there are few reports which describe the characteristics of electronic devices on flexible substrates. In this study, we fabricated flexible thin-film transistors (TFTs) on plastic substrates with channel layers formed by the spin-coating of ZnO nanoparticles and investigated their electrical properties in the flat and bent states. To the best of our knowledge, this study is the first attempt to fabricate fully functional ZnO TFTs on flexible substrates through the solution process. The ZnO TFTs showed n-channel device characteristics and operated in enhancement mode. In the flat state, a representative ZnO TFT presented a very low field-effect mobility of 1.2 x 10(-5) cm(2) V-1 s(-1), while its on/off ratio was as high as 1.5 x 10(3). When the TFT was in the bent state, some of the device parameters changed. The changes of the device parameters and the possible reasons for these changes will be described. The recovery characteristics of the TFTs after being subjected to cyclic bending will be discussed as well.
机译：近年来受到关注。特别地，解决方案工艺已成为柔性电子领域的焦点，因为它们提供了使用低温工艺以低成本，高产量制造柔性电子的机会。然而，很少有报道描述柔性基板上的电子设备的特性。在这项研究中，我们在具有旋涂ZnO纳米粒子的通道层的塑料基板上制造了柔性薄膜晶体管（TFT），并研究了它们在平坦和弯曲状态下的电性能。据我们所知，这项研究是通过溶液工艺在柔性基板上制造全功能ZnO TFT的首次尝试。 ZnO TFT具有n沟道器件特性，并以增强模式工作。在平坦状态下，代表性的ZnO TFT的场效应迁移率非常低，仅为1.2 x 10（-5）cm（2）V-1 s（-1），而其开/关比高达1.5 x 10（3）。 TFT处于弯曲状态时，某些设备参数发生了变化。将描述设备参数的更改以及这些更改的可能原因。也将讨论在经受周期性弯曲之后的TFT的恢复特性。

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