Micro-four-point-probe characterization of nanowires fabricated using the nanostencil technique

R LIN; M BAMMERLIN; O HANSEN

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Micro-four-point-probe characterization of nanowires fabricated using the nanostencil technique

机译：使用纳米模板技术制造的纳米线的微四点探针表征

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Micro four-point probes fabricated using a conventional silicon microfabrication technique were used to measure the resistivity of thin Au and Pt nanowires deposited with the nanostencil evaporation method in both direct and indirect contact modes. We found the resistivity to be an order of magnitude larger than the bulk values for both nanowires. A micrometre-resolution resistivity map was obtained of the Pt nanowires, but could not be obtained of the Au wires due to poor adhesion. We discuss the microprobe as a tool for the characterization of such small structures and the possibilities of further improving the technique.

机译：使用常规的硅微细加工技术制造的微四点探针用于测量直接和间接接触模式下通过纳米模板蒸发法沉积的金和铂纳米线的电阻率。我们发现电阻率比两个纳米线的体积值都大一个数量级。获得了Pt纳米线的微米分辨率电阻率图，但由于粘合力差而无法获得Au线。我们讨论了微探针作为表征此类小结构的工具以及进一步改进该技术的可能性。

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《Nanotechnology》 |2004年第9期|共5页
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R LIN; M BAMMERLIN; O HANSEN;
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1. Micro-four-point-probe characterization of nanowires fabricated using the nanostencil technique [J] . R LIN, M BAMMERLIN, O HANSEN Nanotechnology . 2004,第9期

机译：使用纳米模板技术制造的纳米线的微四点探针表征
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机译：Ga蒸气与氨直接反应制备GaN纳米线的结构表征。

Micro-four-point-probe characterization of nanowires fabricated using the nanostencil technique

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