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The simulation of single-charging effects in the programming characteristics of nanocrystal memories

机译：纳米晶体存储器编程特性中单电荷效应的仿真

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摘要

We present a Monte Carlo simulation and modelling method for single-electron nanocrystal memories including the nanocrystal inter-dot effect. A nanocrystal memory is modelled as a network of modified single-tunnel junctions for its programme operation and as a network of channel resistances for simulating drain current to extract its threshold voltage. Additionally, in each modelling, capacitive coupling between each geometrical element was determined using a device simulator. The results show that nanocrystal memory parameters are closely related to both static and dynamic programming characteristics, especially in the single-charging property. When the inter-dot spacing is large, a step-like single-charging feature becomes salient, but the threshold voltage shift between each state decreases. In contrast, when the dots are spatially closer, the threshold voltage shift between each state increases, while the step-like shape vanishes and resembles that of conventional flash memories. From the dynamic viewpoint, a closer spacing of dots makes it easier to charge the nanocrystal memory quantum dots more uniformly. The presented method will be helpful for the design of single-electron nanocrystal memories.
机译：我们提出了包括纳米晶体点间效应的单电子纳米晶体存储器的蒙特卡罗模拟和建模方法。纳米晶体存储器被建模为用于其编程操作的修改后的单隧道结的网络以及用于模拟漏极电流以提取其阈值电压的沟道电阻的网络。另外，在每个建模中，使用设备模拟器确定每个几何元素之间的电容耦合。结果表明，纳米晶存储参数与静态和动态编程特性都密切相关，尤其是在单充电性方面。当点间距大时，阶梯状的单次充电功能会变得明显，但每种状态之间的阈值电压偏移会降低。相反，当点在空间上更接近时，每个状态之间的阈值电压偏移增加，而阶梯状的形状消失并类似于常规闪存的形状。从动态的观点来看，点的更近的间距使得更容易对纳米晶体存储量子点更均匀地充电。提出的方法将有助于单电子纳米晶体存储器的设计。

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