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Bascule nanobridges self-assembled with ZnO nanowires as double Schottky barrier UV switches

机译:与ZnO纳米线自组装的纳米棒纳米桥,作为双肖特基势垒紫外线开关

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摘要

We report the fabrication of a double Schottky barrier (DSB) device by self-assembly of nanowires (NWs). The operating principle of the device is governed by the surface depletion effects of the NWs. High DSBs were formed at the contact interface of ZnO NWs self-assembled into bascule nanobridge (NB) structures. The bascule NB structures exhibited high sensitivity and fast response to UV illumination, having a photocurrent to dark current ratio > 10~4 and a recovery time as short as ~ 3s. The enhanced UV photoresponse of the bascule NB structure is ascribed to the DSB, whose height is tunable with UV light, being high (~0.77eV) in dark and low under UV. The bascule NB structure provides a new type of optical switch for spectrally selective light sensing applications ranging from environmental monitoring to optical communication.
机译:我们报告通过纳米线(NWs)的自组装制造双肖特基势垒(DSB)器件。该设备的工作原理由净水的表面耗尽效应决定。高DSB形成在自组装成纳米棒纳米桥(NB)结构的ZnO NW的接触界面上。杆状NB结构表现出高灵敏度和对紫外线的快速响应,光电流与暗电流之比> 10〜4,恢复时间短至〜3s。芽孢杆菌NB结构的增强的UV光响应归因于DSB,其高度可通过UV光调节,在黑暗中较高(〜0.77eV),在UV下较低。开启式NB结构为光谱选择光感测应用提供了一种新型的光开关,其应用范围从环境监测到光通信。

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