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Large-scale assembly of highly flexible low-noise devices based on silicon nanowires

机译：基于硅纳米线的高柔性低噪声器件的大规模组装

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Recently, integrated flexible devices based on silicon nanowires (Si-NWs) have received significant attention as high performance flexible devices. However, most previous assembly methods can generate only specifically-shaped devices and require unconventional facilities, which has been a major hurdle for industrial applications. Herein, we report a simple but very efficient method for assembling Si-NWs into virtually generally-shape atterns on flexible substrates using only conventional microfabrication facilities, allowing us to mass-produce highly flexible low-noise devices. As proof of this method, we demonstrated the fabrication of highly bendable top-gate transistors based on Si-NWs. These devices showed typical n-type semiconductor behaviors, and exhibited a much lower noise level compared to previous flexible devices based on organic conductors or other nanowires. In addition, the gating behaviors and low-noise characteristics of our devices were maintained, even under highly bent conditions
机译：近来，基于硅纳米线（Si-NWs）的集成柔性器件作为高性能柔性器件受到了广泛的关注。但是，大多数先前的组装方法只能生成特定形状的设备，并且需要非常规的设备，这已成为工业应用的主要障碍。在此，我们报告了一种简单而非常有效的方法，仅使用常规的微加工设备即可将Si-NW组装到柔性基板上的大致呈整体的模型中，从而使我们能够批量生产高度柔性的低噪声器件。作为该方法的证明，我们演示了基于Si-NWs的高可弯曲顶栅晶体管的制造。与以前的基于有机导体或其他纳米线的柔性器件相比，这些器件表现出典型的n型半导体行为，并且噪声水平低得多。此外，即使在高度弯曲的条件下，设备的选通行为和低噪声特性也得以保持

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