Black silicon with high density and high aspect ratio nanowhiskers

Kalem S.; Werner P.; Arthursson ?.; Talalaev V.; Nilsson B.; Hagberg M.; Frederiksen H.; S?dervall U.

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Black silicon with high density and high aspect ratio nanowhiskers

机译：具有高密度和高纵横比的纳米晶须的黑硅

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The physical properties of black silicon (b-Si) formed on Si wafers by reactive ion etching in chlorine plasma are reported in an attempt to clarify the formation mechanism and the origin of the observed optical and electrical phenomena, which are promising for a variety of applications. The b-Si consisting of high density and high aspect ratio sub-micron length whiskers or pillars with tip diameters of well under 3nm exhibits strong photoluminescence (PL) both in the visible and the infrared, which is interpreted in conjunction with defects, confinement effects and near band-edge emission. Structural analysis indicates that the whiskers are all crystalline and encapsulated by a thin Si oxide layer. The infrared vibrational spectrum of Si-O-Si bondings in terms of transverse-optic (TO) and longitudinal-optic (LO) phonons indicates that disorder induced LO-TO optical mode coupling can be an effective tool in assessing the structural quality of the b-Si. The same phonons are likely coupled to electrons in visible region PL transitions. Field emission properties of these nanoscopic features are demonstrated indicating the influence of the tip shape on the emission. Overall properties are discussed in terms of the surface morphology of the nanowhiskers.

机译：报道了在氯等离子体中通过反应性离子刻蚀在Si晶片上形成的黑硅（b-Si）的物理性质，试图阐明形成机理以及所观察到的光学和电学现象的起源，这对于各种化学方法都有希望。应用程序。由高密度和高长径比的亚微米级晶须或柱组成的b-Si，其尖端直径远低于3nm，在可见光和红外光下均显示出强大的光致发光（PL），这与缺陷，限制效应一起解释和近边沿发射。结构分析表明，晶须全部为晶体，并被一薄层氧化硅包裹。 Si-O-Si键的红外振动光谱以横向光子（TO）和纵向光子（LO）声子表示，由无序引起的LO-TO光学模式耦合可以成为评估结构的质量的有效工具。硅相同的声子很可能在可见光区域PL跃迁中耦合到电子。这些纳米特征的场发射特性被证实，表明尖端形状对发射的影响。根据纳米晶须的表面形态来讨论整体性能。

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《Nanotechnology》 |2011年第23期|共8页
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Kalem S.; Werner P.; Arthursson ?.; Talalaev V.; Nilsson B.; Hagberg M.; Frederiksen H.; S?dervall U.;
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1. Black silicon with high density and high aspect ratio nanowhiskers [J] . Kalem S., Werner P., Arthursson ?., Nanotechnology . 2011,第23期

机译：具有高密度和高纵横比的纳米晶须的黑硅
2. Minimizing scattering from antireflective surfaces replicated from low-aspect-ratio black silicon [J] . Christiansen Alexander B., Clausen Jeppe, Asger Mortensen N., Applied Physics Letters . 2012,第13期

机译：降低从低纵横比的黑硅复制的抗反射表面的散射
3. Minimizing scattering from antireflective surfaces replicated from low-aspect-ratio black silicon [J] . Alexander B. Christiansen, Jeppe Clausen, N. Asger Mortensen, Applied Physics Letters . 2012,第13期

机译：降低从低纵横比的黑硅复制的抗反射表面的散射
4. Wafer-level wet etching of high-aspect-ratio through silicon vias (TSVs) with high uniformity and low cost for silicon interposers with high-density interconnect of 3D packaging [C] . Liyi Li, Jiali Wu, Wong C.P. IEEE Electronic Components and Technology Conference . 2015

机译：具有3D封装的高密度互连的硅中介层的晶片级湿法高纵横比的硅通孔（TSV）具有高均匀性和低成本
5. Dry etching of high aspect ratio silicon microstructures in high density plasma sources for microelectromechanical systems. [D] . Weigold, Jason Weldon. 2000

机译：在微机电系统的高密度等离子体源中干法蚀刻高纵横比的硅微结构。
6. High Anodic-Voltage Focusing of Charge Carriers in Silicon Enables the Etching of Regularly-Arranged Submicrometer Pores at High Density and High Aspect-Ratio [O] . Chiara Cozzi, Giovanni Polito, Lucanos M. Strambini, 2018

机译：硅中电荷载流子的高阳极电压聚焦使得能够以高密度和高纵横比蚀刻规则排列的亚微米孔
7. The black silicon method IV: the fabrication of three-dimensional structures in silicon with high aspect ratios for scanning probe microscopy and other applications [O] . Jansen, Henricus V., de Boer, Meint J., Boer, M.A., 1995

机译：黑硅方法IV：以高纵横比在硅中制造三维结构，用于扫描探针显微镜和其他应用
8. Proton/Electron Damage Ratios for Some Violet, Black and Thin Silicon Solar Cells [R] . Walkden, M. W. 1979

机译：一些紫色，黑色和薄硅太阳能电池的质子/电子损伤比率

Black silicon with high density and high aspect ratio nanowhiskers

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