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Controlled deposition of nanotubes on opposing electrodes

机译:纳米管在相对电极上的受控沉积

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We report a method of depositing individual 'templated carbon nanotubes' (T-CNTs) on opposing electrodes so that they are suspended across 100 mu m deep trenches, and in separate experiments across low profile (70 nm thick) opposing electrodes. The geometry of the electrodes with deep trenches was chosen to be essentially identical to that in a micro-electromechanical system (MEMS) testing stage used for mechanical loading of nanostructures. An electric field was used to attract the T-CNTs dispersed in a solvent and critical point drying was employed to protect them from breaking or deforming. The real-time potential change in the circuit was monitored as a means of characterizing the deposition of an individual T-CNT across this deep trench. For the case of sequential deposition on electrodes that are 70 nm above the-substrate surface, a method was developed for counting the number of sequentially deposited T-CNTs. Simultaneous video recording of the deposition of T-CNTs confirmed the measured real-time potential changes for both cases. It was found that the resistance of the circuit changed as each new T-CNT was deposited for the sequential deposition; up to five T-CNTs were sequentially detected. This approach allows for controlled deposition of one-dimensional nanostructures for their potential use in NEMS devices, and may be useful for large-scale integration.
机译:我们报告了一种在相对电极上沉积单个“模板碳纳米管”(T-CNT)的方法,使它们悬浮在100微米深的沟槽中,并在单独的实验中跨越低剖面(70纳米厚)的相对电极。选择具有深沟槽的电极的几何形状,使其与用于纳米结构机械加载的微机电系统(MEMS)测试阶段的几何形状基本相同。使用电场吸引分散在溶剂中的T-CNT,并采用临界点干燥保护它们免于断裂或变形。监视电路中的实时电势变化,作为表征单个T-CNT在该深沟槽上沉积的一种手段。对于在衬底表面上方70 nm的电极上顺序沉积的情况,开发了一种用于计算顺序沉积的T-CNT数量的方法。 T-CNT沉积的同时视频记录证实了两种情况下测得的实时电位变化。结果发现,随着每个新的T-CNT的沉积,电路的电阻发生了变化。依次检测到多达五个T-CNT。该方法允许一维纳米结构的受控沉积,以用于其在NEMS装置中的潜在用途,并且可能对大规模集成有用。

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