Enhanced light output of an InGaN/GaN light emitting diode with a nano-roughened p-GaN surface

Hung-Wen Huang; J T Chu; C C Kao

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Enhanced light output of an InGaN/GaN light emitting diode with a nano-roughened p-GaN surface

机译：具有纳米粗糙p-GaN表面的InGaN / GaN发光二极管的增强的光输出

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This investigation describes the development of an InGaN/GaN light emitting diode (LED) with a nano-roughened top p-GaN surface using an Ni nano-mask and laser etching. The light output of the InGaN/GaN LED with a nano-roughened top p-GaN surface is 1.55 times that of a conventional LED, and the wall-plug efficiency is 68 percent higher at 20 mA. The series resistance of the InGaN/GaN LED was reduced by 32 percent by the increase in the contact area of the nano-roughened surface.

机译：这项研究描述了使用Ni纳米掩模和激光蚀刻技术开发的具有GaN顶部p-GaN纳米表面的InGaN / GaN发光二极管（LED）的开发。具有纳米粗糙化的顶部p-GaN表面的InGaN / GaN LED的光输出是传统LED的1.55倍，并且在20 mA时，壁塞效率高68％。通过增加纳米粗糙化表面的接触面积，InGaN / GaN LED的串联电阻降低了32％。

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《Nanotechnology》 |2005年第9期|共5页
作者
Hung-Wen Huang; J T Chu; C C Kao;
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正文语种 eng
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1. Enhanced light output of an InGaN/GaN light emitting diode with a nano-roughened p-GaN surface [J] . Hung-Wen Huang, J T Chu, C C Kao Nanotechnology . 2005,第9期

机译：具有纳米粗糙p-GaN表面的InGaN / GaN发光二极管的增强的光输出
2. Improvement of InGaN/GaN light emitting diode performance with a nano-roughened p-GaN surface by excimer laser-irradiation [J] . Hung-Wen Huang, C.C. Kao, J.T. Chu, Materials Chemistry and Physics . 2006,第2a3期

机译：通过准分子激光辐照提高具有纳米粗糙化p-GaN表面的InGaN / GaN发光二极管的性能
3. Improvement of InGaN-GaN Light-Emitting Diode Performance With a Nano-Roughened p-GaN Surface [J] . Hung-Wen Huang, C. C. Kao, J. T. Chu, IEEE Photonics Technology Letters . 2005,第5期

机译：纳米粗糙p-GaN表面改善了InGaN-GaN发光二极管的性能
4. Improvement in light-output power of InGaN/GaN light-emitting diodes by p-GaN surface modification using self-assembled metal clusters [C] . E.-J. Kang, C. Huh, S.-H. Lee, International Conference on Solid State Lighting . 2004

机译：通过自组装金属簇通过P-GaN表面改性改进InGaN / GaN发光二极管的光输出功率
5. Quantum efficiency enhancement for GaN based light-emitting diodes and vertical cavity surface-emitting lasers. [D] . Zhang, Fan. 2014

机译：GaN基发光二极管和垂直腔表面发射激光器的量子效率增强。
6. Enhancement of light output power of GaN-based light-emitting diodes with photonic quasi-crystal patterned on p-GaN surface and n-side sidewall roughing [O] . Fang-I Lai, Jui-Fu Yang 2013

机译：通过在p-GaN表面图案化光子准晶体和n侧侧壁粗糙化来增强GaN基发光二极管的光输出功率
7. Enhancement of light output power of GaN-based light-emitting diodes with photonic quasi-crystal patterned on p-GaN surface and n-side sidewall roughing [O] . 2013

机译：通过在p-GaN表面图案化光子准晶体和n侧侧壁粗糙化来增强GaN基发光二极管的光输出功率

Enhanced light output of an InGaN/GaN light emitting diode with a nano-roughened p-GaN surface

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