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The effect of Ge implantation dose on the optical properties of Ge nanocrystals in SiO_2

机译：Ge注入剂量对SiO_2中Ge纳米晶体光学性质的影响

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摘要

Ge nanocrystallites (Ge-nc) embedded in a SiO_2 matrix are investigated using Raman spectroscopy, photoluminescence and Fourier transform infrared spectroscopy. The samples were prepared by ion implantation with different implantation doses (0.5, 0.8, 1, 2, 3 and 4) X 10~(16) cm~(-2) using 250 keV energy. After implantation, the samples were annealed at 1000 deg C in a forming gas atmosphere for 1 h. All samples show a broad Raman spectrum centred at w approx = 304 cm~(-1) with a slight shift depending on the implantation doses. The Raman intensity also depends on the Ge~(74+) dose. A maximum photoluminescence intensity is observed for the sample implanted at room temperature with a dose of 2 X 10~(16) cm~(-2) at 3.2 eV. Infrared spectroscopy shows that the SiO_2 films moved off stoichiometry due to Ge~(74+) ion implantation, and Ge oxides are formed in it. This result is shown as a reduction of GeO_x at exactly the dose corresponding to the maximum blue-violet PL emission and the largest Raman emission at 304 cm~(-1). Finally, the Raman spectra were fitted with a theoretical expression to evaluate the average size, full-width at half-maximum (FWHM) and dispersion of Ge-nc size.
机译：利用拉曼光谱，光致发光和傅立叶变换红外光谱研究了嵌入SiO_2基体中的Ge纳米晶体（Ge-nc）。通过使用250 keV能量以不同的注入剂量（0.5、0.8、1、2、3和4）X 10〜（16）cm〜（-2）进行离子注入制备样品。植入后，将样品在形成气体气氛中于1000℃退火1小时。所有样品均显示出宽于约304 cm〜（-1）的宽拉曼光谱，随注入剂量的不同而略有偏移。拉曼强度也取决于Ge〜（74+）剂量。在3.2 eV下，以2 X 10〜（16）cm〜（-2）的剂量在室温下植入的样品观察到最大的光致发光强度。红外光谱分析表明，由于Ge〜（74+）离子注入，SiO_2薄膜脱离了化学计量，并在其中形成了Ge氧化物。该结果显示为在恰好对应于最大蓝紫色PL发射和最大拉曼发射在304 cm〜（-1）的剂量下GeO_x的减少。最后，拉曼光谱拟合了一个理论表达式，以评估平均尺寸，最大半峰全宽（FWHM）和Ge-nc尺寸的分散。

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