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首页> 外文期刊>Nanotechnology >Formation of mid-infrared emissive InAs quantum dots on a Graded In_xGa_(1-x)As/InP matrix with a more uniform size and higher density under safer growth conditions
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Formation of mid-infrared emissive InAs quantum dots on a Graded In_xGa_(1-x)As/InP matrix with a more uniform size and higher density under safer growth conditions

机译：在更安全的生长条件下，在尺寸更均匀，密度更高的渐变In_xGa_（1-x）As / InP矩阵上形成中红外发射InAs量子点

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摘要

InAs mid-infrared emissive quantum dots (QDs) grown on a graded In_xGa_(1_x)As/InP matrix with more uniform size and higher dot density have been successfully prepared by low pressure metal organic chemical vapour deposition (LP-MOCVD) under safer growth conditions. Low toxic tertiarybutylarsine and tertiarybutylphosphine sources were used to replace the high toxic arsine and phosphine in the MOCVD growth. To improve the process safety further, inertial N_2 instead of the normally used explosive H_2 was used as the earner gas. Initially, by using a two-step growth method, uniform InAs QDs with a high dot density of 1.3 x 10~(10) cm~_2 have been successfully grown on a InGaAs/InP matrix. The emission wavelength of the QDs reaches >2.1 /mu m. The low temperature photoluminescence spectrum of the QDs grown by the two-step growth has much narrower linewidth and higher intensity than that of the QDs grown by using normal Stranski-Krastanow (S-K) and atomic layer epitaxy (ALE) growth methods.
机译：通过在更安全的生长条件下进行低压金属有机化学气相沉积（LP-MOCVD）成功地制备了在具有更均匀尺寸和更高点密度的渐变In_xGa_（1_x）As / InP基质上生长的InAs中红外发射量子点（QD）条件。在MOCVD生长过程中，使用低毒性的叔丁基ar和叔丁基膦源来代替高毒性的ine和膦。为了进一步提高过程安全性，惯性气N_2代替通常使用的炸药H_2被用作辅助气体。最初，通过使用两步生长方法，已经成功地在InGaAs / InP基质上生长了具有高点密度1.3 x 10〜（10）cm〜_2的均匀InAs QD。 QD的发射波长达到> 2.1 /μm。与使用常规Stranski-Krastanow（S-K）和原子层外延（ALE）生长方法生长的QD相比，通过两步生长生长的QD的低温光致发光光谱具有更窄的线宽和更高的强度。

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