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The effect of stacking fault formation on optical properties in vertically aligned ZnO nanowires

机译：堆垛层错形成对垂直排列的ZnO纳米线光学性能的影响

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摘要

Vertically aligned ZnO nanowire arrays were grown on Al2O3 (006) and Zn/Al2O3 (006) substrates under the same fabrication condition using metal-organic chemical vapour deposition. The single-crystalline ZnO nanowires grown on Al2O3 and Zn/Al2O3 exhibited different morphology and crystalline characteristics. ZnO nanowires having in-plane or 30 degrees-twist orientations to the Al2O3 were grown on the Zn/Al2O3 while the nanowires fabricated on the Al2O3 exhibited the 30 degrees-twist orientation. In addition, I-1 intrinsic stacking faults were observed only in the nanowires grown on the Zn/Al2O3. The insertion of Zn layers changed the growth direction of the ZnO nanowires that induced the difference in their morphology and crystalline structures. Deterioration of the optical characteristics in the ZnO nanowires due to the crystalline defects, i.e. the stacking faults, was also observed.
机译：使用金属有机化学气相沉积法，在相同的制造条件下，在Al2O3（006）和Zn / Al2O3（006）衬底上生长垂直排列的ZnO纳米线阵列。在Al2O3和Zn / Al2O3上生长的单晶ZnO纳米线表现出不同的形貌和晶体特性。在Zn / Al2O3上生长与Al2O3具有面内或30度扭曲取向的ZnO纳米线，而在Al2O3上制造的纳米线则表现出30度扭曲的取向。此外，仅在Zn / Al2O3上生长的纳米线中观察到了I-1本征堆叠缺陷。 Zn层的插入改变了ZnO纳米线的生长方向，从而引起了其形态和晶体结构的差异。还观察到由于晶体缺陷即堆叠缺陷导致的ZnO纳米线中光学特性的劣化。

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