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首页> 外文期刊>Nanotechnology >Homogeneous nanocrystalline cubic silicon carbide films prepared by inductively coupled plasma chemical vapor deposition
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Homogeneous nanocrystalline cubic silicon carbide films prepared by inductively coupled plasma chemical vapor deposition

机译：电感耦合等离子体化学气相沉积法制备均相纳米晶立方碳化硅薄膜

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摘要

Silicon carbide films with different carbon concentrations x(C) have been synthesized by inductively coupled plasma chemical vapor deposition from a SiH4/CH4/H-2 gas mixture at a low substrate temperature of 500 degrees C. The characteristics of the films were studied by x-ray photoelectron spectroscopy, x-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, Fourier transform infrared absorption spectroscopy, and Raman spectroscopy. Our experimental results show that, at x(C) = 49 at.%, the film is made up of homogeneous nanocrystalline cubic silicon carbide without any phase of silicon, graphite, or diamond crystallites/clusters. The average size of SiC crystallites is approximately 6 nm. At a lower value of x(C), polycrystalline silicon and amorphous silicon carbide coexist in the films. At a higher value of x(C), amorphous carbon and silicon carbide coexist in the films.
机译：在500℃的较低衬底温度下，通过SiH4 / CH4 / H-2气体混合物的电感耦合等离子体化学气相沉积合成了具有不同碳浓度x（C）的碳化硅膜。 X射线光电子能谱，X射线衍射，扫描电子显微镜，高分辨率透射电子显微镜，傅里叶变换红外吸收光谱和拉曼光谱。我们的实验结果表明，在x（C）= 49 at。％的情况下，该薄膜由均匀的纳米晶立方碳化硅组成，没有任何相的硅，石墨或金刚石微晶/团簇。 SiC微晶的平均尺寸约为6 nm。在较低的x（C）值下，薄膜中会同时存在多晶硅和非晶碳化硅。在较高的x（C）值下，非晶碳和碳化硅共存于薄膜中。

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