• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Nanotechnology >Highly ordered hexagonally arranged nanostructures on silicon through a self-assembled silicon-integrated porous anodic alumina masking layer
【24h】

Highly ordered hexagonally arranged nanostructures on silicon through a self-assembled silicon-integrated porous anodic alumina masking layer

机译：通过自组装的硅集成多孔阳极氧化铝掩模层，在硅上以高度有序的六角形排列的纳米结构

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

A combined process of electrochemical formation of self-assembled porous anodic alumina thin films on a Si substrate and Si etching through the pores was used to fabricate ideally ordered nanostructures on the silicon surface with a long-range, two-dimensional arrangement in a hexagonal close-packed lattice. Pore arrangement in the alumina film was achieved without any pre-patterning of the film surface before anodization. Perfect pattern transfer was achieved by an initial dry etching step, followed by wet or electrochemical etching of Si at the pore bottoms. Anisotropic wet etching using tetramethyl ammonium hydroxide ( TMAH) solution resulted in pits in the form of inverted pyramids, while electrochemical etching using a hydrofluoric acid (HF) solution resulted in concave nanopits in the form of semi-spheres. Nanopatterns with lateral size in the range 12-200 nm, depth in the range 50-300 nm and periodicity in the range 30-200 nm were achieved either on large Si areas or on pre-selected confined areas on the Si substrate. The pore size and periodicity were tuned by changing the electrolyte for porous anodic alumina formation and the alumina pore widening time. This parallel large-area nanopatterning technique shows significant potential for use in Si technology and devices.
机译：在硅衬底上电化学形成自组装多孔阳极氧化铝薄膜和通过孔进行硅刻蚀的组合过程，用于在硅表面上以长距离，二维排列，六角形闭合的方式制造理想有序的纳米结构。装满的格子。氧化铝膜中的孔排列无需在阳极氧化之前对膜表面进行任何预构图即可实现。通过最初的干法刻蚀步骤，然后在孔底进行湿法或电化学刻蚀，可以实现完美的图案转移。使用四甲基氢氧化铵（TMAH）溶液进行各向异性湿法刻蚀会形成倒金字塔形的凹坑，而使用氢氟酸（HF）溶液进行电化学刻蚀会导致形成半球形的凹形纳米坑。可以在大的Si区域上或在Si基板上预先选定的受限区域上获得横向尺寸为12-200 nm，深度为50-300 nm和周期性为30-200 nm的纳米图案。通过改变用于形成多孔阳极氧化铝的电解质和氧化铝孔的加宽时间来调节孔径和周期性。这种并行的大面积纳米图案化技术显示出在硅技术和器件中使用的巨大潜力。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号