• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Nanotechnology >A reliable method for the counting and control of single ions for single-dopant controlled devices
【24h】

A reliable method for the counting and control of single ions for single-dopant controlled devices

机译：单掺杂受控设备中单离子计数和控制的可靠方法

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

By 2016, transistor device size will be just 10 nm. However, a transistor that is doped at a typical concentration of 10(18) atoms cm(-3) has only one dopant atom in the active channel region. Therefore, it can be predicted that conventional doping methods such as ion implantation and thermal diffusion will not be available ten years from now. We have been developing a single-ion implantation (SII) method that enables us to implant dopant ions one-by-one into semiconductors until the desired number is reached. Here we report a simple but reliable method to control the number of single-dopant atoms by detecting the change in drain current induced by single-ion implantation. The drain current decreases in a stepwise fashion as a result of the clusters of displaced Si atoms created by every single-ion incidence. This result indicates that the single-ion detection method we have developed is capable of detecting single-ion incidence with 100% efficiency. Our method potentially could pave the way to future single-atom devices, including a solid-state quantum computer.
机译：到2016年，晶体管器件的尺寸将仅为10 nm。但是，以10（18）个原子cm（-3）的典型浓度掺杂的晶体管在有源沟道区中只有一个掺杂剂原子。因此，可以预见，从现在起十年后，将不再有常规的掺杂方法，例如离子注入和热扩散。我们一直在开发一种单离子注入（SII）方法，该方法使我们能够将掺杂剂离子一个接一个地注入半导体中，直到达到所需数量为止。在这里，我们报告了一种简单而可靠的方法，即通过检测由单离子注入引起的漏极电流的变化来控制单掺杂原子的数量。由于每个单离子入射产生的位移Si原子簇，漏极电流以逐步的方式减小。该结果表明，我们开发的单离子检测方法能够以100％的效率检测单离子入射。我们的方法可能为未来的单原子设备（包括固态量子计算机）铺平道路。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号