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首页> 外文期刊>Nanotechnology >A Y2O3 : Yb nanoscale magnet obtained by HEBM: C-3i/C-2 site occupancies, size/strain analysis and crystal field levels of Yb3+ ions
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A Y2O3 : Yb nanoscale magnet obtained by HEBM: C-3i/C-2 site occupancies, size/strain analysis and crystal field levels of Yb3+ ions

机译：通过HEBM获得的Y2O3：Yb纳米磁体：C-3i / C-2的位点占据，尺寸/应变分析和Yb3 +离子的晶体场能级

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摘要

A Y2O3: Yb nanoscale magnet that belongs to the cubic C-type or bixbyite structure family was synthesized by high energy ball milling ( HEBM). An as-prepared sample ( S1) was annealed at 650 degrees C ( S2) and 950 degrees C ( S3). Cation populations were determined by the refinement of site occupancies. It was found that in S1 and S2 Yb3+ ions occupy exclusively the 8b ( or C-3i) position, whereas in S3 a small amount of Yb3+ is also located on Wyckoff-site 24d ( or C-2). X-ray powder diffraction line broadening analysis was done by using the Rietveld method using regular TCH-pV functions ( isotropic effects) and symmetrized cubic harmonics ( anisotropic effects) for the refinement. The line broadening anisotropy decreases due to strain effects from S1 to S3, while the crystallite size anisotropy increases from S1 to S3. Transmission electron microscopy ( TEM) and Raman spectroscopy were used to define the homogeneity, microstructure and to locally probe the structure of the samples S1-S3. Magnetic susceptibility results in the 2-300 K temperature regions were analysed by applying the first-order perturbation theory. The mean energy gap between ground and excited crystal field levels ( E-i), and their effective magnetic numbers M-ieff, were determined. The analysis of the paramagnetic temperature shows the absence of clusterization of the magnetic ions.
机译：通过高能球磨（HEBM）合成了属于立方C型或方铁矿结构族的Y2O3：Yb纳米级磁体。将准备好的样品（S1）在650摄氏度（S2）和950摄氏度（S3）退火。阳离子的数量由场地占用率的提高确定。发现在S1和S2中，Yb3 +离子仅占据8b（或C-3i）位置，而在S3中，少量Yb3 +也位于Wyckoff位置24d（或C-2）。通过使用常规的TCH-pV函数（各向同性效应）和对称三次谐波（各向异性效应）的Rietveld方法进行X射线粉末衍射线展宽分析，以进行细化。由于从S1到S3的应变效应，线展宽各向异性减小，而从S1到S3的微晶尺寸各向异性增加。透射电子显微镜（TEM）和拉曼光谱用于定义同质性，微观结构并局部探测样品S1-S3的结构。应用一阶扰动理论分析了在2-300 K温度范围内的磁化率结果。确定了地面和激发的晶体场能级（E-i）之间的平均能隙，以及它们的有效磁数M-ieff。对顺磁性温度的分析表明不存在磁性离子的聚集。

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