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FABRICATION OF CR NANOSTRUCTURES WITH THE SCANNING TUNNELLING MICROSCOPE

机译:扫描隧道显微镜制备CR纳米结构

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In this work, nanometer scale electrically conducting lines and quantum structures on chromium (Cr) films have been fabricated with an ambient scanning tunnelling microscope and a subsequent CR-14 chromium etch. The line width of these structures is approximately 60 nm and the height of the lines is approximately 10 nm. In addition, experiments have been performed to determine the Cr etch rate in CR-14 etchant and the thickness of the Cr layer that could be oxidized through by the STM tunnelling current. [References: 24]
机译:在这项工作中,已经使用环境扫描隧道显微镜和随后的CR-14铬蚀刻技术在铬(Cr)膜上制造了纳米级导电线和量子结构。这些结构的线宽大约为60 nm,线的高度大约为10 nm。另外,已经进行了实验以确定CR-14蚀刻剂中的Cr蚀刻速率以及可以被STM隧穿电流氧化的Cr层的厚度。 [参考:24]

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