Fabrication of monocrystalline refractory metal nanostructures capable of ballistic electron transport

Mikhailov GM.; Chernykh AV.; Dubonos SV.; Koval YI. Malikov IV.; Aparshina LI.

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Fabrication of monocrystalline refractory metal nanostructures capable of ballistic electron transport

机译：具有弹道电子传输能力的单晶难熔金属纳米结构的制备

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Refractory metal monocrystalline nanostructures with spatial resolution up to 200 nm are fabricated by subtractive electron lithography and Al mask patterning of epitaxial refractory metal films. The size (width) effect on electrical properties of bridge-type metallic nanostructures with residual electron mean-free paths 200-500 nm is observed for the first time. It is also found that the change of the positive sign of electrical bending resistance at room temperature to the negative one at helium temperature proves the realization of the ballistic limit in electron transport in cross-type nanostructures. The effect of both ion etching and thermal annealing of nanostructures is also investigated. [References: 14]

机译：通过减法电子光刻和外延难熔金属膜的Al掩模构图，制造了空间分辨率高达200 nm的难熔金属单晶纳米结构。首次观察到具有剩余电子均值自由路径为200-500 nm的桥型金属纳米结构的电性能的尺寸（宽度）影响。还发现，室温下的耐电弯曲性的正号变为氦气温度下的负性，证明了在交叉型纳米结构中实现了电子传输的弹道极限。还研究了离子刻蚀和纳米结构热退火的效果。 [参考：14]

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《Nanotechnology》 |1998年第1期|共5页
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Mikhailov GM.; Chernykh AV.; Dubonos SV.; Koval YI. Malikov IV.; Aparshina LI.;
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1. Fabrication of monocrystalline refractory metal nanostructures capable of ballistic electron transport [J] . Mikhailov GM., Chernykh AV., Dubonos SV., Nanotechnology . 1998,第1期

机译：具有弹道电子传输能力的单晶难熔金属纳米结构的制备
2. The edge and bulk electron state dominated magnetotransport n multi-terminal singly-crystalline refractory metal nanostructures [J] . G M Mikhailov, A V Chernykh Nanotechnology . 2000,第4期

机译：边缘和体电子态为主的磁传输n多端单晶难熔金属纳米结构
3. Occurrence of nonohmic trend in the ballistic transport mode of a modelled low dimensional device capable of performing electronic functions [J] . M. Taazeem Ansari, A. Almohammedi, M. Rafat, Superlattices and microstructures . 2021,第Mara期

机译：一种能够执行电子功能的模型低维设备的弹道传输模式的发生非潜能趋势
4. CONTRIBUTION OF D-BAND ELECTRONS TO BALLISTIC ELECTRON TRANSPORT AND INTERFACIAL SCATTERING DURING ELECTRON-PHONON NONEQUILIBRIUM IN THIN METAL FILMS [C] . Patrick E. Hopkins ASME summer heat transfer conference;HT2009 . 2009

机译：薄膜中电子-声子非平衡过程中D带电子对弹道电子传输和界面散射的贡献
5. Ballistic electron magnetic microscopy: Hot-electron transport studies and magnetic imaging of ferromagnetic multilayer films, nanostructures, and tunnel junctions. [D] . Rippard, William Horrocks. 2001

机译：弹道电子显微镜：铁磁多层膜，纳米结构和隧道结的热电子传输研究和磁成像。
6. Exploring the fabrication and transfer mechanism of metallic nanostructures on carbon nanomembranes via focused electron beam induced processing [O] . Christian Preischl, Linh Hoang Le, Elif Bilgilisoy, 2021

机译：通过聚焦电子束诱导加工探索金属纳米结构对金属纳米结构的制造和转移机理
7. Ballistic electron transport in hybrid ferromagnet/two-dimensional electron gas sandwich nanostructure: Spin polarization and magnetoresistance effect [O] . Wang Y, Chen NF, Jiang Y, 2009

机译：混合铁磁体/二维电子气夹层纳米结构中的弹道电子传输：自旋极化和磁阻效应

Fabrication of monocrystalline refractory metal nanostructures capable of ballistic electron transport

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