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Molecular dynamics simulation on burst and arrest of stacking faults in nanocrystalline Cu under nanoindentation

机译:纳米压痕条件下纳米晶铜堆垛层错的爆发和阻止的分子动力学模拟

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摘要

Nanoindentation induces versatile deformation mechanisms. The situation is examined here for the case of nanocrystalline Cu by means of parallel molecular dynamics simulations. The indenter is applied to the grain boundary (GB) or to the grain interior. The inter-atomic interaction of Cu is modelled by both the Lennard-Jones potential and the embedded atom method potential. The burst and arrest of stacking faults hold the key for the plastic deformation of nanocrystalline Cu under nanoindentation, in clear contrast to the case of nanoindentation on single-crystal Cu. The following descending order of indentation resistance is found: single crystal (or polycrystal of large grain size), nanocrystal when indented on the grain interior, and nanocrystal indented on the GB.
机译:纳米压痕诱导了多种变形机制。在这里,通过平行分子动力学模拟研究了纳米晶铜的情况。压头应用于晶粒边界(GB)或晶粒内部。 Cu的原子间相互作用是通过Lennard-Jones势和嵌入式原子方法势来建模的。与单晶铜纳米压痕的情况形成鲜明对比的是,堆叠缺陷的破裂和阻止是纳米压痕下纳米晶铜塑性变形的关键。耐压痕性按以下降序排列:单晶(或大晶粒多晶),在晶粒内部压痕时的纳米晶体和在GB处压痕的纳米晶体。

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