Molecular electronics offer an alternative pathway to construct nanoscale circuits in which the critical dimension is naturally associated with molecular sizes. We describe the fabrication and testing of nanoscale molecular-electronic circuits that comprise a molecular monolayer of [2] rotaxanes sandwiched between metal nanowires to form an 8 X 8 crossbar within a 1 mu m~2 area. The resistance at each cross point of the crossbar can be switched reversibly. By using each cross point as an active memory cell, crossbar circuits were operated as rewritable, nonvolatile memory with a density of 6.4 Gbits cm~(-2). By setting the resistances at specific cross points, two 4 X 4 subarrays of the crossbar were configured to be a nanoscale demultiplexer and multiplexer that were used to read memory bits in a third subarray.
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机译：分子电子学为构建纳米级电路提供了另一种途径，其中关键尺寸与分子大小自然相关。我们描述了纳米级分子电子电路的制造和测试，该电路包含[2]轮烷的分子单层，该分子单层夹在金属纳米线之间，以在1μm〜2的面积内形成8 X 8的交叉开关。纵横开关每个交叉点的电阻可以可逆地切换。通过将每个交叉点用作有源存储单元，将交叉开关电路用作密度为6.4 Gbits cm〜（-2）的可重写非易失性存储器。通过在特定交叉点设置电阻，交叉开关的两个4 X 4子阵列被配置为纳米级解复用器和复用器，用于读取第三子阵列中的存储位。
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