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首页> 外文期刊>Nanotechnology >Amorphous Silicon nanoparticles in compound films grown on cold substrates for high-efficiency photoluminescence
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Amorphous Silicon nanoparticles in compound films grown on cold substrates for high-efficiency photoluminescence

机译：在冷基板上生长的复合膜中的非晶硅纳米颗粒，用于高效光致发光

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Silicon nanoparticles have been fabricated in both oxide and nitride matrices by using plasma-enhanced chemical vapour deposition, for which a low substrate temperature down to 50 deg C turns out to be most favourable. High-rate deposition onto such a cold substrate results in the formation of nanoscaled silicon particles, which have revealed an amorphous nature under transmission electron microscope (TEM) examination. The particle size can be readily controlled below 3.0 nm, and the number density amounts to over 10~(12) cm~(-2), as calculated from the TEM micrographs. Strong photoluminescence in the whole visible light range has been observed in the as-deposited Si-in-SiO_x and Si-in-SiN_x thin films. Without altering the size or structure of the particles, a post-annealing at 300 deg C for 2 mm raised the photoluminescence efficiency to a level comparable to the achievements with nanocrystalline Si-in-SiO_2 samples prepared at high temperature. This low-temperature procedure for fabricating light-emitting silicon structures opens up the possibility of manufacturing integrated silicon-based optoelectronics.
机译：已经通过使用等离子体增强化学气相沉积法在氧化物和氮化物基体中制造了硅纳米颗粒，这对于低至50摄氏度的低基板温度是最有利的。在这种冷基板上的高速率沉积导致形成纳米级硅颗粒，这些硅颗粒在透射电子显微镜（TEM）检查下显示出非晶态性质。根据TEM显微照片计算，可以容易地将粒径控制在3.0nm以下，并且数密度总计超过10〜（12）cm〜（-2）。在沉积的Si-in-SiO_x和Si-in-SiN_x薄膜中，在整个可见光范围内都观察到强光致发光。在不改变颗粒尺寸或结构的情况下，在300摄氏度下进行2毫米的后退火可以将光致发光效率提高到与在高温下制备纳米晶Si-in-SiO_2样品所能达到的水平相当。这种用于制造发光硅结构的低温程序为制造集成的硅基光电器件提供了可能性。

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