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首页> 外文期刊>Nanotechnology >Evolution of Ge nanoislands on Si(110)-‘16 × 2’ surface under thermal annealing studied using STM
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Evolution of Ge nanoislands on Si(110)-‘16 × 2’ surface under thermal annealing studied using STM

机译：使用STM研究热退火下Si（110）-“ 16×2”表面Ge纳米岛的演化

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摘要

The initial nucleation of Ge nanoclusters on Si(110) at room temperature (RT),annealing-induced surface roughening and the evolution of three-dimensional Ge nanoislands have been investigated using scanning tunneling microscopy (STM). A few monolayers (ML) of Ge deposited at room temperature lead to the formation of Ge clusters which are homogeneously distributed across the surface. The stripe-like patterns, characteristic of the Si(110)-‘16 × 2’ surface reconstruction are also retained. Increasing annealing temperatures, however, lead to significant surface diffusion and thus, disruption of the underlying ‘16 × 2’ reconstruction. The annealing-induced removal of the stripe structures (originated from ‘16 × 2’ reconstruction) starts at approximately 300 °C, whereas the terrace structures of Si(110) are thermally stable up to 500 °C. At approximately 650 °C, shallow Ge islands of pyramidal shape with (15, 17, 1) side facets start to form. Annealing at even higher temperatures enhances Ge island formation. Our findings are explained in terms of partial dewetting of the metastable Ge wetting layer (WL) (formed at room temperature) as well as partial relaxation of lattice strain through three-dimensional (3D) island growth.
机译：利用扫描隧道显微镜（STM）研究了室温（RT）下Si（110）上Ge纳米团簇的初始成核，退火引起的表面粗糙化和三维Ge纳米岛的演化。在室温下沉积的Ge的几个单层（ML）导致形成均匀分布在整个表面上的Ge簇。还保留了Si（110）-“ 16×2”表面重建所特有的条纹状图案。然而，升高的退火温度会导致明显的表面扩散，从而破坏底层的“ 16×2”重建。退火引起的条纹结构去除（源自“ 16×2”重构）始于大约300°C，而Si（110）的平台结构在高达500°C的温度下具有热稳定性。在大约650°C时，开始形成具有（15、17、1）侧面的金字塔形状的浅锗岛。在更高的温度下退火会增强锗岛的形成。我们的发现以亚稳态Ge润湿层（WL）（在室温下形成）的部分去润湿以及通过三维（3D）岛生长引起的晶格应变的部分弛豫来解释。

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