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Bandgap opening in oxygen plasma-treated graphene

机译:氧等离子体处理的石墨烯中的带隙开口

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We report a change in the semimetallic nature of single-layer graphene after exposure to oxygen plasma. The resulting transition from semimetallic to semiconducting behavior appears to depend on the duration of the exposure to the plasma treatment. The observation is confirmed by electrical, photoluminescence and Raman spectroscopy measurements. We explain the opening of a bandgap in graphene in terms of functionalization of its pristine lattice with oxygen atoms. Ab initio calculations show more details about the interaction between carbon and oxygen atoms and the consequences on the optoelectronic properties, that is, on the extent of the bandgap opening upon increased functionalisation density.
机译:我们报告了单层石墨烯暴露于氧等离子体后的半金属性质的变化。从半金属行为向半导体行为的转变似乎取决于等离子体处理的持续时间。该观察通过电学,光致发光和拉曼光谱法测量得到证实。我们用带氧原子的原始晶格功能化来解释石墨烯中带隙的开放。从头算计算显示出更多有关碳原子与氧原子之间的相互作用以及对光电性能的影响的详细信息,即,随着功能化密度的增加,带隙开口的程度。

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