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Electronic transport and noise in ballistic n~+ -n-n~+ semiconductor nanodiodes

机译:弹道n〜+ -n-n〜+半导体纳米二极管中的电子传输和噪声

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摘要

We present a semiclassical kinetic theory for the electronic transport and noise properties of ballistic n~+ -n-n~+ semiconductor nanodiodes. The theory is based on an exact solution of the Vlasov-Langevin kinetic equation self-consistently coupled to the Poisson equation, and takes into account the Pauli exclusion principle. The current-voltage characteristics calculated from the present theory perfectly agree with existing theoretical predictions. Concerning the noise properties, the theory offers the possibility of computing the current noise under all current regimes, thus overcoming the inherent limitations of existing theories.
机译:我们提出了一种弹道n〜+ -n-n〜+半导体纳米二极管的电子输运和噪声特性的半经典动力学理论。该理论基于将Vlasov-Langevin动力学方程与Poisson方程自洽耦合的精确解,并考虑了Pauli排除原理。根据本理论计算出的电流-电压特性与现有理论预测完全吻合。关于噪声特性,该理论提供了在所有当前状态下计算当前噪声的可能性,从而克服了现有理论的固有局限性。

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