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Scanning gate microscopy of quantum rings: effects of an external magnetic field and of charged defects

机译：量子环的扫描门显微镜：外部磁场和带电缺陷的影响

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摘要

We study scanning gate microscopy (SGM) in open quantum rings obtained from buried semiconductor InGaAs/InAlAs heterostructures. By performing a theoretical analysis based on the Keldysh–Green function approach we interpret the radial fringes observed in experiments as the effect of randomly distributed charged defects. We associate SGM conductance images with the local density of states (LDOS) of the system. We show that such an association cannot be made with the current density distribution. By varying an external magnetic field we are able to reproduce recursive quasi-classical orbits in LDOS and conductance images, which bear the same periodicity as the Aharonov–Bohm effect.
机译：我们研究了从埋入式半导体InGaAs / InAlAs异质结构获得的开放量子环中的扫描门显微镜（SGM）。通过基于Keldysh-Green函数方法进行理论分析，我们将实验中观察到的径向条纹解释为随机分布的带电缺陷的影响。我们将SGM电导图像与系统的局部状态密度（LDOS）相关联。我们表明，这种关联不能与当前的密度分布建立。通过改变外部磁场，我们能够在LDOS和电导图像中再现递归的准经典轨道，它们具有与Aharonov-Bohm效应相同的周期性。

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