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首页> 外文期刊>Nanotechnology >Stable field emission from arrays of vertically aligned free-standing metallic nanowires
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Stable field emission from arrays of vertically aligned free-standing metallic nanowires

机译：垂直排列的独立式金属纳米线阵列的稳定场发射

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摘要

We present a fully elaborated process to grow arrays of metallic nanowires with controlled geometry and density, based on electrochemical filling of nanopores in track-etched templates. Nanowire growth is performed at room temperature, atmospheric pressure and is compatible with low cost fabrication and large surfaces. This technique offers an excellent control of the orientation, shape and nanowires density. It is applied to fabricate field emission arrays with a good control of the emission site density. We have prepared Co, Ni, Cu and Rh nanowires with a height of 3 mu m, a diameter of 80 nm and a density of similar to 10(7) cm(-2). The electron field emission measurements and total energy distributions show that the as-grown nanowires exhibit a complex behaviour, first with emission activation under high field, followed by unstable emission. A model taking into account the effect of an oxide layer covering the nanowire surface is developed to explain this particular field emission behaviour. Finally, we present an in situ cleaning procedure by ion bombardment that collectively removes this oxide layer, leading to a stable and reproducible emission behaviour. After treatment, the emission current density is similar to 1 mA cm(-2) for a 30 V mu m-1 applied electric field.
机译：我们基于轨迹蚀刻模板中纳米孔的电化学填充，提出了一种经过精心设计的工艺，以控制几何形状和密度来生长金属纳米线阵列。纳米线生长在室温，大气压下进行，并且与低成本制造和大表面兼容。这项技术可以很好地控制方向，形状和纳米线密度。它可用于制造场发射阵列，并能很好地控制发射点密度。我们已经制备了Co，Ni，Cu和Rh纳米线，其高度为3微米，直径为80 nm，密度类似于10（7）cm（-2）。电子场发射测量和总能量分布表明，生长中的纳米线表现出复杂的行为，首先是在高电场下具有发射激活，然后是不稳定的发射。建立了一种模型，该模型考虑了覆盖纳米线表面的氧化物层的影响，以解释这种特定的场发射行为。最后，我们介绍了一种通过离子轰击进行的原位清洗程序，该程序可共同去除该氧化物层，从而产生稳定且可再现的发射行为。处理后，对于30 Vμm-1的施加电场，其发射电流密度类似于1 mA cm（-2）。

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