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Large enhancement of the thermoelectric figure of merit in a ridged quantum well

机译：脊形量子阱中热电性能的大幅提高

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Recently, new quantum features have been observed and studied in the area of ridged quantum wells (RQWs). Periodic ridges on the surface of the quantum well layer impose additional boundary conditions on the electron wavefunction and reduce the quantum state density. As a result, the chemical potential of RQWs increases and becomes ridge-height-dependent. Here, we propose a system composed of RQWs and an additional layer on the top of the ridges forming a periodic series of p+–n+ junctions (or metal–n+ junctions). In such systems, a charge depletion region develops inside the ridges and the effective ridge height reduces, becoming a rather strong function of temperature T . Consequently, the T dependence of chemical potential is magnified and the Seebeck coefficient S increases. We investigate S in the system of semiconductor RQWs having abrupt p+–n+ junctions or metal–n+ junctions on the top of the ridges. Analysis made on the basis of Boltzmann transport equations shows a dramatic increase in S for both cases. At the same time, other transport coefficients remain unaffected by the junctions. Calculations show one order of magnitude increase in the thermoelectric figure of merit ZT relative to the bulk material.
机译：最近，在脊形量子阱（RQW）区域中观察到了新的量子特征并进行了研究。量子阱层表面上的周期性脊对电子波函数施加附加的边界条件，并降低了量子态密度。结果，RQWs的化学势增加并且变得依赖于脊高。在这里，我们提出了一个由RQW和脊顶部的附加层组成的系统，该附加层形成了一系列周期性的p + -n +结（或金属-n +结）。在这样的系统中，在脊内部形成电荷耗尽区域，并且有效脊高度减小，成为温度T的相当强的函数。因此，化学势的T依赖性被放大并且塞贝克系数S增加。我们研究了在脊顶部具有突然的p + –n +结或金属–n +结的半导体RQW系统中的S。基于玻尔兹曼输运方程式进行的分析表明，两种情况下的S都显着增加。同时，其他传输系数仍然不受结影响。计算表明，热电性能因数ZT相对于散装材料增加了一个数量级。

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