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Silicon nanowire-based tunneling field-effect transistors on flexible plastic substrates

机译：柔性塑料基板上基于硅纳米线的隧穿场效应晶体管

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A technique to implement silicon nanowire (SiNW)-based tunneling field-effect transistors (TFETs) on flexible plastic substrates is developed for the first time. The p-i-n configured Si NWs are obtained from an Si wafer using a conventional top-down CMOS-compatible technology, and they are then transferred onto the plastic substrate. Based on gate-controlled band-to-band tunneling (BTBT) as their working principle, the SiNW-based TFETs show normal p-channel switching behavior with a threshold voltage of -1.86 V and a subthreshold swing of 827 mV/dec. In addition, ambipolar conduction is observed due to the presence of the BTBT between the heavily doped p(+) drain and n(+) channel regions, indicating that our TFETs can operate in the n-channel mode as well. Furthermore, the BTBT generation rates for both the p-channel and n-channel operating modes are nearly independent of the bending state (strain = 0.8%) of the plastic substrate.
机译：首次开发了在柔性塑料基板上实现基于硅纳米线（SiNW）的隧穿场效应晶体管（TFET）的技术。使用常规的自上而下的CMOS兼容技术从硅晶圆获得p-i-n配置的硅NW，然后将它们转移到塑料基板上。基于栅极控制的带间隧道（BTBT）作为其工作原理，基于SiNW的TFET表现出正常的p沟道开关行为，阈值电压为-1.86 V，亚阈值摆幅为827 mV / dec。此外，由于在重掺杂的p（+）漏极和n（+）沟道区域之间存在BTBT，因此观察到双极性导电，这表明我们的TFET也可以在n沟道模式下工作。此外，p通道和n通道工作模式的BTBT生成率几乎与塑料基板的弯曲状态（应变= 0.8％）无关。

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