• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Nanotechnology >Orientational ordering of solution derived epitaxial Gd-doped ceria nanowires induced by nanoscratching
【24h】

Orientational ordering of solution derived epitaxial Gd-doped ceria nanowires induced by nanoscratching

机译：纳米划痕诱导溶液衍生的外延掺d二氧化铈纳米线的取向顺序

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

When one-dimensional nanostructures are epitaxially grown on a substrate a key goal is to control the nanowire's position and orientation. Nanoscratching of single crystalline (001)-LaAlO3 substrates is demonstrated to be extraordinarily effective in directing the self-assembly of Ce0.9Gd0.1O2-y epitaxial nanowires grown by chemical solution deposition. The local anisotropic elastic strain field imposed by the indentation lines is responsible for the breaking of the pre-existing orientation energy degeneracy and selects the nanowires' orientation parallel to the lines to an extent that can reach 100%.
机译：当一维纳米结构在衬底上外延生长时，关键目标是控制纳米线的位置和方向。单晶（001）-LaAlO3衬底的纳米划痕被证明在指导通过化学溶液沉积法生长的Ce0.9Gd0.1O2-y外延纳米线的自组装方面非常有效。压痕线施加的局部各向异性弹性应变场负责破坏先前存在的取向能简并性，并选择与线平行的纳米线取向，达到可以达到100％的程度。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号