Phosphorus doping of ultra-small silicon nanocrystals

Perego M; Bonafos C; Fanciulli M

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Phosphorus doping of ultra-small silicon nanocrystals

机译：超小型硅纳米晶的磷掺杂

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P-doped Si nanocrystals (radius <= 2 nm) were synthesized by depositing an ultrathin (0.3 nm) P-SiO2 film close to each SiO layer of SiO/SiO2 multilayers. During annealing P atoms migrate into the Si-rich region. Due to the low diffusivity of P in SiO2, P atoms segregate in the Si nanocrystal region and are incorporated in the silicon nanostructures. The P level in the Si nanoclusters can be controlled by changing the P content in the P-SiO2 layer.

机译：通过在SiO / SiO2多层膜的每个SiO层附近沉积一个超薄（0.3 nm）P-SiO2膜来合成P掺杂的Si纳米晶体（半径<= 2 nm）。在退火过程中，P原子迁移到富硅区域。由于P在SiO2中的扩散率低，P原子偏析在Si纳米晶体区域中，并结合到硅纳米结构中。可以通过改变P-SiO 2层中的P含量来控制Si纳米簇中的P水平。

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《Nanotechnology》 |2010年第2期|共6页
作者
Perego M; Bonafos C; Fanciulli M;
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正文语种 eng
中图分类特种结构材料;
关键词
ION MASS-SPECTROMETRY; SI NANOCRYSTALS; OXIDE LAYERS; DOPED SI; PHOTOLUMINESCENCE; EFFICIENCY;

机译：离子质谱;SI纳米晶体;氧化物层;掺杂SI;光致发光;效率;

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专利

1. Phosphorus doping of ultra-small silicon nanocrystals [J] . Perego M, Bonafos C, Fanciulli M Nanotechnology . 2010,第2期

机译：超小型硅纳米晶的磷掺杂
2. Doping efficiency of phosphorus doped silicon nanocrystals embedded in a SiO_2 matrix [J] . S. Gutsch, A. M. Hartel, D. Hiller, Applied Physics Letters . 2012,第23期

机译：嵌入SiO_2基质中的磷掺杂硅纳米晶体的掺杂效率。
3. Preparation and thermoelectric characterization of phosphorus-doped Si nanocrystals/silicon oxide multilayers [J] . Kobayashi Hisayoshi, Akaishi Ryushiro, Kato Shinya, Japanese journal of applied physics . 2020,第SG期

机译：磷掺杂Si纳米晶体/氧化硅多层的制备和热电表征
4. Quantum-Chemical Calculations of Pure and Phosphorous Doped Ultra-small Silicon Nanocrystals [C] . Sh. Makhkamov, F. Umarova, A. Normurodov, NATO Advanced Research Workshop on Advanced Nanomaterials for Detection of CBRN . 2020

机译：纯磷掺杂超小硅纳米晶的量子化学计算
5. Fabrication and characterization of rare earth-doped silicon nanocrystals and rare earth-doped silicon dioxide nanostructures [D] . St. John, John Vincent 1998

机译：稀土掺杂硅纳米晶和稀土掺杂二氧化硅纳米结构的制备与表征
6. Absence of free carriers in silicon nanocrystals grown from phosphorus- and boron-doped silicon-rich oxide and oxynitride [O] . Daniel Hiller, Julian López-Vidrier, Keita Nomoto, 2018

机译：由磷和硼掺杂的富硅氧化物和氮氧化物生长的硅纳米晶体中没有自由载流子
7. Absence of free carriers in silicon nanocrystals grown from phosphorus- and boron-doped silicon-rich oxide and oxynitride [O] . Daniel Hiller, Julian López-Vidrier, Keita Nomoto, 2018

机译：从磷和硼掺杂的富含氧化硅和氮氧化物生长的硅纳米晶体中没有自由载体

Phosphorus doping of ultra-small silicon nanocrystals

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