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Effects of lateral asymmetry on electronic structure of strained semiconductor nanorings in a magnetic field

机译：横向不对称性对磁场中应变半导体纳米环电子结构的影响

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摘要

The influence of lateral asymmetry on the electronic structure and optical transitions in elliptical strained InAs nanorings is analyzed in the presence of a perpendicular magnetic field. Two-dimensional rings are assumed to have elliptical inner and outer boundaries oriented in mutually orthogonal directions. The influence of the eccentricity of the ring on the energy levels is analyzed. For large eccentricity of the ring, we do not find any Aharonov-Bohm effect, in contrast to circular rings. Rather, the single-particle states of the electrons and the holes are localized as in two laterally coupled quantum dots formed in the lobes of the nanoring. Our work indicates that the control of shape is important for the existence of the Aharonov-Bohm effect in semiconductor nanorings.
机译：在存在垂直磁场的情况下，分析了横向不对称对椭圆形应变InAs纳米环中电子结构和光学跃迁的影响。假定二维环具有在相互正交的方向上取向的椭圆形内部和外部边界。分析了环的偏心度对能级的影响。对于圆环的大偏心率，与圆环相比，我们没有发现任何Aharonov-Bohm效应。而是，电子和空穴的单粒子状态像在形成在纳米环的瓣中的两个横向耦合的量子点中那样被局部化。我们的工作表明形状的控制对于半导体纳米环中Aharonov-Bohm效应的存在很重要。

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