Effective growth of boron nitride nanotubes by thermal chemical vapor deposition

Lee CH; Wang JS; Kayatsha VK; Huang JY; Yap YK

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Effective growth of boron nitride nanotubes by thermal chemical vapor deposition

机译：通过热化学气相沉积有效生长氮化硼纳米管

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Effective growth of multiwalled boron nitride nanotubes (BNNTs) has been obtained by thermal chemical vapor deposition (CVD). This is achieved by a growth vapor trapping approach as guided by the theory of nucleation. Our results enable the growth of BNNTs in a conventional horizontal tube furnace within an hour at 1200 degrees C. We found that these BNNTs have an absorption band edge of 5.9 eV, approaching that of single h-BN crystals, which are promising for future nanoscale deep-UV light emitting devices.

机译：通过热化学气相沉积（CVD）已经获得了多壁氮化硼纳米管（BNNT）的有效生长。这是通过成核理论指导的生长蒸气捕获法来实现的。我们的结果能够使BNNT在常规水平管式炉中在一小时内于1200摄氏度下生长。我们发现这些BNNT的吸收带边缘为5.9 eV，接近单个h-BN晶体的吸收带边缘，这对于未来的纳米级有望深紫外发光器件。

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《Nanotechnology》 |2008年第45期|共5页
作者
Lee CH; Wang JS; Kayatsha VK; Huang JY; Yap YK;
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原文格式 PDF
正文语种 eng
中图分类一般工业技术;
关键词
CARBON NANOTUBES; PURE; TEMPERATURE; PRECURSOR;

机译：碳纳米管;纯;温度;前驱体;

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1. Effective growth of boron nitride nanotubes by thermal chemical vapor deposition [J] . Lee CH, Wang JS, Kayatsha VK, Nanotechnology . 2008,第45期

机译：通过热化学气相沉积有效生长氮化硼纳米管
2. Boron nitride nanotube growth via boron oxide assisted chemical vapor transport-deposition process using LiNO3 as a promoter [J] . Andrei T. Matveev1, Konstantin L. Firestein1, Alexander E. Steinman1, 纳米研究：英文版 . 2015,第006期

机译：以LiNO3为促进剂的氧化硼辅助化学气相传输沉积工艺生长氮化硼纳米管
3. Synthesis of boron nitride nanotubes by Argon supported Thermal Chemical Vapor Deposition [J] . Ahmad Pervaiz, Khandaker Mayeen Uddin, Amin Yusoff Mohd Physica, E. Low-dimensional systems & nanostructures . 2015,第Null期

机译：氩支持热化学气相沉积法合成氮化硼纳米管
4. Chemical vapor deposition growth of boron incorporated graphitic carbon nitride film for carbon based semiconductor systems [C] . Noriyuki Urakami, Maito Kosaka, Yoshio Hashimoto Compound Semiconductor Week . 2019

机译：用于碳基半导体系统的掺硼氮化石墨碳氮化物膜的化学气相沉积生长
5. The low-temperature thermal chemical vapor deposition and catalyzed chemical vapor deposition of aluminum nitride and silicon nitride [D] . Dupuie, Jeffrey L. 1991

机译：氮化铝和氮化硅的低温热化学气相沉积和催化化学气相沉积
6. Wafer-scale and selective-area growth of high-quality hexagonal boron nitride on Ni(111) by metal-organic chemical vapor deposition [O] . Hokyeong Jeong, Dong Yeong Kim, Jaewon Kim, -1

机译：金属有机化学气相沉积法在Ni（111）上高质量地生长六方氮化硼的晶片规模和选择性区域
7. Template synthesis of boron nitride nanotubes over iron impregnated mesoporous silica MCM-41 by chemical vapor deposition technique [O] . Saner Okan Burcu, Kocabaş Özlem Züleyha, Kocabas Ozlem Zuleyha, 2011

机译：铁浸渍介孔二氧化硅MCM-41上化学气相沉积技术模板合成氮化硼纳米管

Effective growth of boron nitride nanotubes by thermal chemical vapor deposition

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