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首页> 外文期刊>Nanotechnology >Two-dimensional arrays of nanometre scale holes and nano-V-grooves in oxidized Si wafers for the selective growth of Ge dots or Ge/Si hetero-nanocrystals
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Two-dimensional arrays of nanometre scale holes and nano-V-grooves in oxidized Si wafers for the selective growth of Ge dots or Ge/Si hetero-nanocrystals

机译：氧化硅晶片中纳米级孔和纳米V型槽的二维阵列，用于选择性生长Ge点或Ge / Si异质纳米晶体

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摘要

Two-dimensional (2D) arrays of nanometre scale holes were opened in thin SiO_2 layers on silicon by electron beam lithography and chemical etching. Oxidized silicon wafers with a 5 nm thick SiO_2 layer on top were used in this respect. Pattern transfer involved either only removal of SiO_2 or a two-step process of oxide removal and anisotropic silicon chemical etching to form nanometre scale silicon V-grooves. The size of the holes in the photoresist layer varied in the range 40-80 nm, depending on the exposure dose used. The smallest holes in the oxide were about 50 nm in diameter, while in V-grooves the smallest width was approx = 70 nm. 2D arrays of Ge dots or Ge/Si hetero-nanocrystals were selectively grown on these patterned silicon wafers. In small windows only one Ge island per hole was nucleated.
机译：通过电子束光刻和化学蚀刻，在硅上的薄SiO_2层中打开纳米孔的二维（2D）阵列。在这方面，使用在顶部具有5nm厚的SiO 2层的氧化硅晶片。图案转移涉及仅去除SiO 2或两步去除氧化物和各向异性硅化学刻蚀以形成纳米级硅V型槽的过程。取决于所使用的曝光剂量，光致抗蚀剂层中的孔的尺寸在40-80nm的范围内变化。氧化物中的最小孔直径约为50 nm，而在V型槽中，最小宽度约为70 nm。在这些图案化的硅晶片上选择性地生长了Ge点或Ge / Si杂纳米晶体的2D阵列。在小窗户上，每个孔只有一个锗岛。

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