The structural properties of GaN/AlN core-shell nanocolumn heterostructures

Hestroffer K.; Mata R.; Camacho D.; Leclere C.; Tourbot G.; Niquet Y.M.; Cros A.; Bougerol C.; Renevier H.; Daudin B.

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The structural properties of GaN/AlN core-shell nanocolumn heterostructures

机译：GaN / AlN核壳纳米柱异质结构的结构性质

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The growth and structural properties of GaN/AlN core-shell nanowire heterostructures have been studied using a combination of resonant x-ray diffraction, Raman spectroscopy and high resolution transmission electron microscopy experiments. For a GaN core of 20 nm diameter on average surrounded by a homogeneous AlN shell, the built-in strain in GaN is found to agree with theoretical calculations performed using a valence force field model. It is then concluded that for an AlN thickness up to at least 12 nm both core and shell are in elastic equilibrium. However, in the case of an inhomogeneous growth of the AlN shell caused by the presence of steps on the sides of the GaN core, plastic relaxation is found to occur. Consistent with the presence of dislocations at the GaN/AlN interface, it is proposed that this plastic relaxation, especially efficient for AlN shell thickness above 3 nm, is promoted by the shear strain induced by the AlN inhomogeneity.

机译：结合共振x射线衍射，拉曼光谱和高分辨率透射电子显微镜实验研究了GaN / AlN核壳纳米线异质结构的生长和结构特性。对于平均直径为20 nm的GaN核，被均匀的AlN壳包围，发现GaN中的固有应变与使用价价场模型进行的理论计算一致。然后得出结论，对于厚度至少为12 nm的AlN，核和壳都处于弹性平衡状态。然而，在由于GaN核的侧面上的台阶的存在而导致AlN壳的生长不均匀的情况下，发现发生了塑性松弛。与在GaN / AlN界面处存在位错一致，有人提出这种塑性弛豫是由AlN不均匀性引起的剪切应变促进的，尤其对于3 nm以上的AlN壳厚度有效。

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《Nanotechnology》 |2010年第41期|共7页
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Hestroffer K.; Mata R.; Camacho D.; Leclere C.; Tourbot G.; Niquet Y.M.; Cros A.; Bougerol C.; Renevier H.; Daudin B.;
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1. The structural properties of GaN/AlN core-shell nanocolumn heterostructures [J] . Hestroffer K., Mata R., Camacho D., Nanotechnology . 2010,第41期

机译：GaN / AlN核壳纳米柱异质结构的结构性质
2. Nanostructural characterization and two-dimensional electron-gas properties in high-mobility AlGaN/AlN/GaN heterostructures grown on epitaxial AlN/sapphire templates [J] . Makoto Miyoshi, Takashi Egawa, Hiroyasu Ishikawa, Journal of Applied Physics . 2005,第6期

机译：外延AlN /蓝宝石模板上生长的高迁移率AlGaN / AlN / GaN异质结构的纳米结构表征和二维电子气性质
3. Microstructural properties and atomic arrangements in GaN/sapphire and AlxGa1-xN/AlN/GaN/sapphire heterostructures [J] . Kim TW, Lee DU, Lee HS, Journal of Applied Physics . 2004,第12期

机译：GaN /蓝宝石和AlxGa1-xN / AlN / GaN /蓝宝石异质结构的微观结构性质和原子排列
4. Structural properties and surface roughness of heterostructure GaN/AlN on Si (100) substrate [C] . Anis Suhaili Bakri, Nafarizal Nayan, Ahmad Shuhaimi Abu Bakar, IEEE Student Conference on Research and Development . 2020

机译：Si（100）衬底上异质结构GaN / AlN的结构特性和表面粗糙度
5. A first-principles study of structural, electronic and optical properties of GaN, ZnO and (GaN)1--x(ZnO) x. [D] . Liu, Jian. 2015

机译：GaN，ZnO和（GaN）1-x（ZnO）x的结构，电子和光学性质的第一性原理研究。
6. Band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterostructures measured by X-ray photoemission spectroscopy [O] . Ling Sang, Qin Sheng Zhu, Shao Yan Yang, 2014

机译：X射线光发射光谱法测量的非极性A面GaN / AlN和AlN / GaN异质结构的能带偏移
7. Growth, structural and optical properties of GaN/AlN and GaN/GaInN nanowire heterostructures [O] . Daudin B., Bougerol C., Camacho D., 2012

机译：GaN / AlN和GaN / GaInN纳米线异质结构的生长，结构和光学性质

The structural properties of GaN/AlN core-shell nanocolumn heterostructures

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