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Correlated micro-photoluminescence and electron microscopy studies of the same individual heterostructured semiconductor nanowires

机译：相同的单个异质结构半导体纳米线的相关微光致发光和电子显微镜研究

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摘要

To correlate optical properties to structural characteristics, we developed a robust strategy for characterizing the same individual heterostructured semiconductor nanowires (NWs) by alternating low temperature micro-photoluminescence (μ-PL), low voltage scanning (transmission) electron microscopy and conventional transmission electron microscopy. The NWs used in this work were wurtzite GaAs core with zinc blende GaAsSb axial insert and AlGaAs radial shell grown by molecular beam epitaxy. The series of experiments demonstrated that high energy (200kV) electrons are detrimental for the optical properties, whereas medium energy (5-30kV) electrons do not affect the PL response. Thus, such medium energy electrons can be used to select NWs for correlated optical-structural studies prior to μ-PL or in NW device processing. The correlation between the three main μ-PL bands and crystal phases of different compositions, present in this heterostructure, is demonstrated for selected NWs. The positions where a NW fractures during specimen preparation can considerably affect the PL spectra of the NW. The effects of crystal-phase variations and lattice defects on the optical properties are discussed. The established strategy can be applied to other nanosized electro-optical materials, and other characterization tools can be incorporated into this routine.
机译：为了将光学特性与结构特性相关联，我们开发了一种鲁棒的策略，可以通过交替使用低温微光致发光（μ-PL），低压扫描（透射）电子显微镜和常规透射电子显微镜来表征相同的异质结构半导体纳米线（NW） 。在这项工作中使用的NW是纤锌矿型GaAs磁芯，带有掺锌的GaAsSb轴向插入物和通过分子束外延生长的AlGaAs径向壳。一系列实验表明，高能（200kV）电子对光学特性有害，而中能（5-30kV）电子不会影响PL响应。因此，在μ-PL之前或在NW器件处理中，此类中能电子可用于选择NW进行相关的光学结构研究。对于选定的NW，证明了该异质结构中存在的三个主要μ-PL谱带与不同组成的晶相之间的相关性。样品制备过程中NW断裂的位置会极大影响NW的PL光谱。讨论了晶相变化和晶格缺陷对光学性能的影响。既定的策略可以应用于其他纳米尺寸的电光材料，并且其他表征工具可以并入该例程中。

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