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Synthesis and characterization of ZnO nanowires and their integration into dye-sensitized solar cells

机译：ZnO纳米线的合成，表征及其在染料敏化太阳能电池中的整合

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摘要

ZnO nanowires, grown on transparent conducting oxide substrates from aqueous solutions of methenamine and Zn(NO_3)_2, were integrated as the wide band gap semiconductor into dye-sensitized solar cells. ZnO nanowires and their growth mechanisms were studied using electron microscopy, x-ray diffraction and photoluminescence measurements. The solution growth method forms dense arrays of long nanowires oriented normal to the substrate surface because nanowires growing at off-normal angles are prevented from growing further when they run into neighbouring wires. Dye-sensitized solar cells with ZnO nanowires were assembled and characterized using optical and electrical measurements. Short circuit current densities of 1.3 mA cm~(-2), and overall power conversion efficiencies of 0.3 percent were achieved with 8 mu m long nanowires. Photocurrent and efficiency increase with increasing nanowire length and improved light harvesting. Low surface area and a shunt that appears under light illumination limit the solar cell performance. Internal quantum efficiencies were similar for nanowires of all lengths, indicating that electron transport is not limited by the nanowire dimensions for aspect ratios less than 70.
机译：由甲基苯二胺和Zn（NO_3）_2水溶液在透明导电氧化物衬底上生长的ZnO纳米线，作为宽带隙半导体集成到染料敏化太阳能电池中。使用电子显微镜，X射线衍射和光致发光测量研究了ZnO纳米线及其生长机理。溶液生长方法形成垂直于基板表面取向的长纳米线的密集阵列，这是因为以偏离法线角度生长的纳米线在碰到相邻的线时会进一步生长，因此被阻止了。组装了具有ZnO纳米线的染料敏化太阳能电池，并使用光学和电气测量对其进行了表征。使用8微米长的纳米线，可实现1.3 mA cm〜（-2）的短路电流密度和0.3％的总功率转换效率。光电流和效率随着纳米线长度的增加和光收集的改善而增加。低表面积和在光照下出现的分流限制了太阳能电池的性能。所有长度的纳米线的内部量子效率都相似，这表明电子传输不受纵横比小于70的纳米线尺寸的限制。

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