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Digital image correlation of nanoscale deformation fields for local stress measurement in thin films

机译：用于薄膜局部应力测量的纳米级形变场的数字图像相关性

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In this paper, the application of an in situ stress measurement technique to a silicon nitride thin film deposited onto a thick silicon substrate is presented. The method is based on the measurement of the displacement field originated when a slot is milled into the material under study. Displacements are obtained by digital correlation analysis of scanning electron microscope (SEM) images, whereas milling is performed by ion milling in focused ion-beam equipment. Due to the mechanical constraint introduced by the substrate and the small thickness of the tested layer, the displacements generated by the milling process are in the range 0-5 nm, which is one of the smallest displacement ranges measured up to now in a relaxation-based measurement technique. The local stress value determined with this new method is in good agreement with values obtained by a classical method like the wafer bending test.
机译：在本文中，提出了将原位应力测量技术应用于沉积在厚硅衬底上的氮化硅薄膜的应用。该方法基于对缝隙铣入所研究材料时产生的位移场的测量。位移是通过扫描电子显微镜（SEM）图像的数字相关性分析获得的，而铣削则是通过聚焦离子束设备中的离子铣削来进行的。由于基材引入的机械约束和被测层的厚度较小，因此铣削过程产生的位移在0-5 nm范围内，这是迄今为止在弛豫状态下测得的最小位移范围之一。基于测量技术。用这种新方法确定的局部应力值与通过传统方法（如晶片弯曲测试）获得的值非常吻合。

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