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首页> 外文期刊>Nanotechnology >Fabrication and actuation of customized nanotweezers with a 25 nm gap
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Fabrication and actuation of customized nanotweezers with a 25 nm gap

机译：缝隙为25 nm的定制纳米镊子的制造和启动

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摘要

By combining conventional silicon microfabrication and direct three-dimensional growth using electron-beam induced carbon contamination, we have developed a scheme for fabricating nanotweezers with a gap of 25 nm. Four silicon oxide cantilevers with a spacing of 1.5 #mu#m extending over an edge of a silicon support chip, were covered with a thin layer of metal. By focusing an electron beam at the ends of the cantilevers, narrow supertips grew from the substrate. Careful alignment of the substrate made the supertips converge to form a nanoscale gap. We demonstrate customization of the shape and size of the tweezer arms, using a simple scheme that allows conveniently fine-tuning of the tip features and the gap to within 5 nm. The supertips can be metallized subsequently, to the made conducting, without significantly affecting the shape of the tweezers. By applying a voltage on the outer electrodes with respect to the inner two electrodes, the gap can be opened and closed. This enables the device to grab and manipulate small particles, with the option of direct electrical measurement on the particle. The advantage of our approach is that no voltage difference is applied between the tweezer arms, making the device ideal for application with such fragile structures as organic objects.
机译：通过将常规的硅微加工与使用电子束诱导的碳污染的直接三维生长相结合，我们已经开发出了制造间隙为25 nm的纳米镊子的方案。在硅支撑芯片的边缘上延伸的四个间距为1.5＃μm的氧化硅悬臂被金属薄层覆盖。通过将电子束聚焦在悬臂的末端，窄的超尖端从基板上长出。基板的仔细对准使超尖端收敛形成纳米级间隙。我们使用一种简单的方案演示了镊子臂形状和尺寸的定制，该方案可以方便地将尖端特征和间隙微调到5 nm以内。随后可以将超尖端金属化为制成的导体，而不会显着影响镊子的形状。通过相对于内部两个电极在外部电极上施加电压，可以打开和关闭间隙。这使设备能够抓取和操纵小颗粒，并可以选择直接对颗粒进行电气测量。我们的方法的优势在于，在镊子臂之间不会施加电压差，这使得该器件非常适合用于诸如有机物之类的易碎结构。

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